Solution-processed tungsten oxide with Ta5+ doping enhances the hole selective transport for crystalline silicon solar cells

Dan Liu,Penghui Ren,Di Zhao,Songyu Li,Jianqiao Wang,Hang Zhou,Wei Liu,Yuheng Zeng,Xuegong Yu,Peng Wang,Can Cui
DOI: https://doi.org/10.1039/d4tc03049d
IF: 6.4
2024-09-26
Journal of Materials Chemistry C
Abstract:Transition metal oxides (TMOs) with high work function (WF) are typically used for hole selective layers for crystalline silicon (c-Si) heterojunction solar cells. Among them, tungsten oxide (WO3-x) exhibits wide bandgap and high thermal stability, however, the photoelectrical conversion efficiency (PCE) of solar cells based on WO3-x lags behind its counterparts (MoO3-x, V2O5-x). Moreover, the films are usually deposited by vacuum methods, for which it is difficult to modulate the WF or oxygen vacancies (VO) to improve the hole selectivity. In this work, a low cost, solution-processed WO3-x film with ion doping is deposited as hole selective layer for p-Si heterojunction solar cells. Experimental results and density functional theory calculation demonstrate that Ta5+ tends to replace W5+ and strengthens the W-O binding, which facilitate the reduction of VO and increase of the WF of WO3-x film, resulting in the increase of band bending of c-Si surface and the improvement of hole selectivity. The solar cells with the structure of p-Si/Ta5+:WO3-x/Ag have achieved a remarkable PCE of 18.67%, which is the highest efficiency obtained for WO3-x/c-Si heterojunction based on solution processing up to now. This work also paves the way of using the doping strategy of WO3-x for other optoelectronic device applications.
materials science, multidisciplinary,physics, applied
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