Abstract:Metal oxides are commonly used in optoelectronic devices due to their transparency and excellent electrical conductivity. Based on its physical properties, each metal oxide serves as the foundation for a unique device. In this study, we opt to determine and assess the physical properties of MoO3 metal oxide. Accordingly, the optical and electronic parameters of MoO3 are evaluated using DFT (Density Functional Theory), and PBE and HSE06 functionals were mainly used in the calculation. It was found that the band structure of MoO3 calculated using PBE and HSE06 exhibited indirect semiconductor properties with the same line quality. Its band gap was 3.027 eV in HSE06 and 2.12 eV in PBE. Electrons and holes had effective masses and mobilities of 0.06673, -0.10084, 3811.11 cm2V-1s-1 and 1630.39 cm2V-1s-1, respectively. In addition, the simulation determined the dependence of the real and imaginary components of the complex refractive index and permittivity of MoO3 on the wavelength of light, and a value of 58 corresponds to the relative permittivity. MoO3 has a refractive index of between 1.5 and 3 in the visible spectrum, which can therefore be used as an anti-reflection layer for solar cells made from silicon. In addition, based on the semiconducting properties of MoO3, it was estimated that it could serve as an emitter layer for a solar cell containing silicon. In this work, we calculated the photoelectric parameters of the MoO3/Si heterojunction solar cell using Sentaurus TCAD (Technology Computing Aided Design). According to the obtained results, the efficiency of the MoO3/Si solar cell with a MoO3 layer thickness of 100 nm and a Si layer thickness of 9 nm is 8.8%, which is 1.24% greater than the efficiency of a homojunction silicon-based solar cell of the same size. The greatest short-circuit current for a MoO3/Si heterojunction solar cell was observed at a MoO3 layer thickness of 60 nm, which was determined by studying the dependency of the heterojunction short-circuit current on the thickness of the MoO3 layer.

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

MoOx Hole Collection Layer for A-Si: H Based Photovoltaic Cells

Study of molybdenum back contact layer to achieve adherent and efficient CIGS2 absorber thin-film solar cells

Alkali Incorporation into Cu(In,Ga)Se-2 Determined by Crystal Orientation of Mo Back Contact: Implications for Highly Efficient Photovoltaic Devices

Back Contact Engineering to Improve CZTSSe Solar Cell Performance by Inserting MoO3 Sacrificial Nanolayers

In situ growth MoS 2 quantum dots as promising interface materials for silicon solar cells

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

High-energy sputtering to deposit conductive and adherent single Molybdenum layer for solar cell applications

Silicon solar cell with tunneling oxide on sulfur‐deficient intrinsic MoS2 thin film

Study on the Thermal Stability of Molybdenum Oxide‐Passivated Silicon Solar Cells

V-Oc Enhancement of Sub-Micron Cigs Solar Cells by Sulfization of the Mo Surface

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

Interface study of molybdenum oxide thin films on n- and p-type crystalline silicon surface

Heterojunction solar cells with asymmetrically carrier-selective contact structure of molybdenum-oxide/silicon/magnesium-oxide

Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Atomic-Layer-Deposited H:MoO x Function Layer as Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Thermally stable MoOx hole selective contact with Al2O3 interlayer for industrial size silicon solar cells