Abstract:So far, intrinsic hydrogenated amorphous silicon (a-Si:H(i)) has been commonly used below molybdenum oxide (MoOx) to form a good contact. An a-Si:H(i)/MoOx stack gives good surface passivation, but often results in poor carrier selectivity after exposure to slightly elevated temperatures >130 °C (Geissbühler et al., 2015) [1]. For this reason, we have investigated an alternative interface layer, a very thin Al2O3 tunneling layer (<2 nm), deposited by atomic layer deposition (ALD), that can provide surface passivation, higher transparency and thermal stability without affecting the hole transport across the contact. To demonstrate this new passivating contact a 6" moly-poly cell, with an Al2O3/MoOx stack at the front side and n-type doped polysilicon at the rear side, was made using a high- throughput spatial ALD tool, and E-beam PVD, for the Al2O3 and MoOx layers, respectively. This resulted in an efficiency of 18.2% with a Voc of 651 mV, a FF of 75.6% and a Jsc of 36.9 mA/cm2. A post-deposition anneal (PDA) of the thin Al2O3 interlayer has significant effect on the Al2O3 thickness, layer stoichiometry, contact selectivity, and sputtering-induced damage. Annealing at higher TPDA (350–600 °C) results in ineffective hole carrier transport and makes the stack more sensitive to ITO damage. The best performing device was, therefore, made using an Al2O3 layer without a PDA treatment. Moreover, we have found that this solar cell structure is thermally stable up to at least 210 °C, and even slightly improves under annealing which makes this device industrially appealing.

Interface study of molybdenum oxide thin films on n- and p-type crystalline silicon surface

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Silicon solar cell with tunneling oxide on sulfur‐deficient intrinsic MoS2 thin film

Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

Structural, optical, and electrical properties of spray-pyrolyzed MoO3 thin films by varying precursor molarity, as hole-selective contact for silicon-based heterojunction devices

MoOx Hole Collection Layer for A-Si: H Based Photovoltaic Cells

Tuning of structural and optical properties of reactively sputtered MoOx films

Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts

Study of molybdenum back contact layer to achieve adherent and efficient CIGS2 absorber thin-film solar cells

Electrical characterization and defect states analysis of Ag/ITO/MoOx/n-Si/LiFx/Al carrier selective contact solar cells processed at room-temperature

In situ growth MoS 2 quantum dots as promising interface materials for silicon solar cells

Atomic-Layer-Deposited H:MoO x Function Layer as Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Tunable Hole Selective Transport by Solution‐processed MoO3‐x Via Doping for p‐Type Crystalline Silicon Solar Cells

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Thermally stable MoOx hole selective contact with Al2O3 interlayer for industrial size silicon solar cells

Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate

Simulation of High Efficiency Silicon Heterojunction Solar Cells with Molybdenum Oxide Carrier Selective Layer

Characterization of ultra smooth interfaces in Mo/Si-multilayers

Electrical and optical characterization of SiONC dielectric thin film deposited by polymer-source chemical vapor deposition

Role of thermal heat-treatment to achieve a highly polycrystalline and compact α-MoO3 thin films