Abstract:Commercial EUV lithographic systems require multilayers with higher reflectance and better stability than those published to date. This work represents our effort to meet these specifications. Interface-engineered Mo-Si multilayers with 70% reflectance and 0.545-nm bandwidth at 13.5-nm wavelength and 71% reflectance with 0.49-nm bandwidth at 12.7-nm wavelength were developed. These results were achieved with 50 bilayers. These new multilayers consist of alternating Mo and Si layers separated by thin boron carbide layers. Depositing boron carbide on the interfaces leads to reduction in molybdenum silicide formation of the Mo-on-Si interfaces. Bilayer contraction is reduced by 30%, implying that there is less intermixing of Mo and Si to form silicide. As a result, the Mo-on-Si interfaces are sharper in interface-engineered multilayers than in standard Mo-Si multilayers. The optimum boron carbide thicknesses have been determined and appear to be different for the Mo-on-Si and Si-on-Mo interfaces. The best results were obtained with 0.4-nm-thick boron carbide layers for the Mo-on-Si interfaces and 0.25-nm-thick boron carbide layers for the Si-on-Mo interfaces. The increase in reflectance is consistent with multilayers having sharper and smoother interfaces. A significant improvement in oxidation resistance of EUV multilayers has been achieved with ruthenium-terminated Mo-Si multilayers. The best capping-layer design consists of a Ru layer separated from the top Si layer by a boron carbide diffusion barrier. This design achieves high reflectance and the best oxidation resistance during EUV exposure in a water-vapor (oxidizing) environment. Electron-beam exposures of 4.5 h (in an effort to simulate EUV exposure perturbation of the top layers) in the presence of 5×10−7-Torr water-vapor partial pressure show no measurable reflectance loss and no increase in the oxide thickness of Ru-terminated multilayers. © 2002 Society of Photo-Optical Instrumentation Engineers.

Characterization of ultra smooth interfaces in Mo/Si-multilayers

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Analysis of periodic Mo/Si multilayers: influence of the Mo thickness

Mo/Si Multilayers with Different Barrier Layers for Applications as Extreme Ultraviolet Mirrors

Improved reflectance and stability of Mo-Si multilayers

A comparative study of the interfacial roughness correlation and propagation in Mo/Si multilayers deposited using RF-magnetron sputtering on silicon, ule and zerodur substrates

Nano-size crystallites in Mo/Si multilayer optics

Interlayer Microstructure of Sputtered Mo/Si Multilayers

Structural characterization of Mo/Si multilayer by grazing incidence X-ray diffraction

Asymmetric Interface and Growth Mechanism in Sputtered W/Si and WSi2/Si Multilayers

Silicide layer growth rates in Mo/Si multilayers

Influence of the substrate finish and thin film roughness on the optical performance of Mo/Si multilayers

Surface Morphology And Structural Observation Of Laser Interference Crystallized A-Si : H/A-Sinx : H Multilayers

Interface State-Related Linear and Nonlinear Optical Properties of Nanocrystalline Si/SiO2 Multilayers

A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

The structure, diffusion and phase formation in Mo/Si multilayers with stressed Mo layers

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers

Delamination of MoS2/SiO2 Interfaces under Nanoindentation.

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Interface study of molybdenum oxide thin films on n- and p-type crystalline silicon surface