Abstract:MoSi2 is widely concerned due to excellent electrical conductivity, oxidation resistance as a typical transition metal silicide. The high-temperature diffusion behavior is one of the important factors for the degradation of MoSi2 coatings. However, the diffusion mechanism in MoSi2 is still unclear. Prior theoretical work mostly focused on defect formation energy, but these are not consistent with the self-diffusion experiments because the migration behaviors were not considered. Therefore, the purpose of this work was to investigate the microscopic diffusion mechanisms of Mo and Si atoms in MoSi2 using density functional theory and the CI-NEB method. We confirmed that the temperature-dependent vibrational contribution has a significant impact on the defect formation free energy. The isolated point defects in MoSi2 will tend to aggregate to form defect complexes, which participate in the atomic diffusion as mediators. The defect migration behaviors of atoms for vacancy mediated, vacancy complex mediated, and antisite assisted jumps were obtained based on electronic structures analysis. The results show that Si diffusion is mediated by intrasublattice jumps of the nearest neighbor Si vacancies. Moreover, the destroyed covalent Mo-Si bonds by Si vacancies and the non-directional weak metal bonds formed by the Mo antisites and Mo atoms could improve the mobility of the Mo atom which results in the low migration barrier. The agreement between our calculations and the reported experimental results indicates that the dominant diffusion mechanism for Mo atoms is mediated by vacancy complex mediated jumps and antisite assisted jumps. It is concluded that the Si vacancy-based defect complexes are likely the diffusion mediators for Mo atom self-diffusion in MoSi2. This work provides a deeper insight into the connection between the atomic mechanism and the macroscopic behavior for the diffusion in the MoSi2, and establishes the basis for further optimizing high-temperature coating materials.

The structure, diffusion and phase formation in Mo/Si multilayers with stressed Mo layers

Silicide layer growth rates in Mo/Si multilayers

Nano-size crystallites in Mo/Si multilayer optics

Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing

Stress relaxation in Mo/Si multilayer structures

Silicide formation by solid-state diffusion in MO/Si multilayer thin films

Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

Interlayer Microstructure of Sputtered Mo/Si Multilayers

Analysis of periodic Mo/Si multilayers: influence of the Mo thickness

Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers

Structural Studies Of Mo/Si Multilayers By Exafs

"Anomalous" diffusion in multi-layer silicide systems

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Characterization of ultra smooth interfaces in Mo/Si-multilayers

XAFS Study on the Microstructure of Mo/Si Multilayers

Structural characterization of Mo/Si multilayer by grazing incidence X-ray diffraction

Annealing Behavior of Ultrathin Mo Layer Located at Interface or on Surface of Ti－Si System

Self-diffusion Mechanisms Based Defect Complexes in MoSi2.

Phase stability, electronic structure and mechanical properties of molybdenum disilicide: a first-principles investigation

Real-time study of the interplay between phase formation and stress evolution at the interface

Molecular dynamics study of solid state interfacial reaction in the Ni-Mo system