Abstract:The amorphous-to-crystalline transition in Al(1.0%wtSi)/Zr and Al(Pure)/Zr multilayers grown by direct-current magnetron sputtering system has been characterized over a range of Al layer thicknesses (1.0-5.0 nm) by using a series of complementary measurements including grazing incidence X-ray reflectometry, atomic force microscopy, X-ray diffraction and high-resolution transmission electron microscopy. The Al layer thickness transition exhibits the Si doped in Al could not only disfavor the crystallization of Al, but also influence the changing trends of surface roughness and diffraction peak position of phase Al<111>. An interesting feature of the presence of Si in Al layer is that Si could influence the transition process in Al(1%wtSi) layer, in which the critical thickness (1.6 nm) of Al(Pure) layer in Al(Pure)/Zr shifts to 1.8 nm of Al(1.0%wtSi) layer in Al(1.0%wtSi)/Zr multilayer. We also found that the Zr-on-Al interlayer is wider than the Al-on-Zr interlayer in both systems, and the Al layers do not have specific crystal orientation in the directions vertical to the layer from SAED patterns below the thickness (3.0 nm) of Al layers. Above the thickness (3.0 nm) of Al layers, the Al layers are highly oriented in Al<111>, so that the transformation from asymmetrical to symmetrical interlayers can be observed. Based on the analysis of all measurements, we build up a model with four steps, which could explain the Al layer thickness transition process in terms of a critical thickness for the nucleation of Al(Pure) and Al(1%wtSi) crystallites.

Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers

Interlayer Microstructure of Sputtered Mo/Si Multilayers

Analysis of periodic Mo/Si multilayers: influence of the Mo thickness

The transition from amorphous to crystalline in Al/Zr multilayers

Nano-size crystallites in Mo/Si multilayer optics

XAFS Study on the Microstructure of Mo/Si Multilayers

Silicide layer growth rates in Mo/Si multilayers

The structure, diffusion and phase formation in Mo/Si multilayers with stressed Mo layers

Structural Studies Of Mo/Si Multilayers By Exafs

Characterization of ultra smooth interfaces in Mo/Si-multilayers

Layer-thickness-dependent Formation of Si-nanocrystals Embedded in Amorphous Si/SiO2 Multilayers

Structural characterization of Mo/Si multilayer by grazing incidence X-ray diffraction

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Silicide formation by solid-state diffusion in MO/Si multilayer thin films

Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Microstructure Evolution in Zr-Mo Multilayers Induced by Ion Irradiation

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

Solid-State Amorphization in Ni/Mo Multilayers Studied with Molecular-Dynamics Simulation

Structural study of sputtered Pd/Si multilayers

Smart sensing of the multifunctional properties of magnetron sputtered $MoS_2$ across the amorphous-crystalline transition