Abstract:MoSi2 is widely concerned due to excellent electrical conductivity, oxidation resistance as a typical transition metal silicide. The high-temperature diffusion behavior is one of the important factors for the degradation of MoSi2 coatings. However, the diffusion mechanism in MoSi2 is still unclear. Prior theoretical work mostly focused on defect formation energy, but these are not consistent with the self-diffusion experiments because the migration behaviors were not considered. Therefore, the purpose of this work was to investigate the microscopic diffusion mechanisms of Mo and Si atoms in MoSi2 using density functional theory and the CI-NEB method. We confirmed that the temperature-dependent vibrational contribution has a significant impact on the defect formation free energy. The isolated point defects in MoSi2 will tend to aggregate to form defect complexes, which participate in the atomic diffusion as mediators. The defect migration behaviors of atoms for vacancy mediated, vacancy complex mediated, and antisite assisted jumps were obtained based on electronic structures analysis. The results show that Si diffusion is mediated by intrasublattice jumps of the nearest neighbor Si vacancies. Moreover, the destroyed covalent Mo-Si bonds by Si vacancies and the non-directional weak metal bonds formed by the Mo antisites and Mo atoms could improve the mobility of the Mo atom which results in the low migration barrier. The agreement between our calculations and the reported experimental results indicates that the dominant diffusion mechanism for Mo atoms is mediated by vacancy complex mediated jumps and antisite assisted jumps. It is concluded that the Si vacancy-based defect complexes are likely the diffusion mediators for Mo atom self-diffusion in MoSi2. This work provides a deeper insight into the connection between the atomic mechanism and the macroscopic behavior for the diffusion in the MoSi2, and establishes the basis for further optimizing high-temperature coating materials.

Silicide formation by solid-state diffusion in MO/Si multilayer thin films

Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/Amorphous-Silicon Multilayer Thin Films

Kinetic and Thermodynamic Aspects of Phase Evolution in Ti/a-Si Multilayer Films

In Situ Characterization of Titanium Silicide Formation: the Effect of Mo Interlayer, Temperature Ramp-Rate, and Annealing Atmosphere

Growth of amorphous silicide during Ti/Si interfacial reactions in multilayer thin films

Silicide layer growth rates in Mo/Si multilayers

The structure, diffusion and phase formation in Mo/Si multilayers with stressed Mo layers

Structural Transitions in Titanium Amorphous-Silicon Multilayers

Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

Self-diffusion Mechanisms Based Defect Complexes in MoSi2.

Differences Between Interfacial and Surface Molybdenum in the Formation of Tisi2

The Formation of C54 TiSi2 in The Presence of Implanted or Deposited Molybdenum

The Formation of C54 TiSi<sub>2</sub> in The Presence of Implanted or Deposited Molybdenum

Effect of Liquid-Phase Siliconizing Process on Silicon Diffusion Behavior in Mo Matrix

Composition Evolution of Mo–Si–O Films under Heat Treatment

"Anomalous" diffusion in multi-layer silicide systems

Synthesis of Molybdenum Silicide by Both Ion Implantation and Ion Beam Assisted Deposition

Simultaneous Planar Growth of Amorphous and Crystalline Ni Silicides

Mechanically activated self-propagating high-temperature synthesis of titanium silicide-molybdenum disilicide composite using constituent elements

Formation of MoSi2 and associated fractal growth on Si surface upon high current pulsed Mo-ion implantation

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers