Stress relaxation in Mo/Si multilayer structures

R. R. Kola,D. L. Windt,W. K. Waskiewicz,B. E. Weir,R. Hull,G. K. Celler,C. A. Volkert
DOI: https://doi.org/10.1063/1.106771
IF: 4
1992-06-22
Applied Physics Letters
Abstract:The as-deposited stress in sputtered, 75-Å-period Mo/Si multilayers was measured to be approximately −350 MPa (compressive), and relaxed to approximately −150 MPa after thermal cycling to 200 °C. The multilayer period was found to decrease by 0.25 Å as a result of thermal cycling, with only a slight decrease in peak soft-x-ray reflectance. The stress-temperature behavior of individual Mo and Si films was also measured, and correlated with the multilayer behavior: stress relaxation in the multilayer is attributed to viscous flow associated with defect annihilation, occurring predominantly in the amorphous Si layers.
physics, applied
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