Abstract:Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environment-in contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS.

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films.

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Nano-size crystallites in Mo/Si multilayer optics

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Stress Dependent Structure of Annealed Nitrogen-Doped Cz-Si

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing

Effects of different fabrication processes on stress of SIMOX structure

Micro-Raman Stress Characterization of Crystalline Si as a Function of the Lithiation State

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

Raman Stress Measurement of Crystalline Silicon Desensitizes Shear Stress: Only on {001} Crystal Plane

X-ray stress measurement of SiC single-crystal induced by laser ablation

Study of stress distribution on nano-polycrystalline silicon thin film with Raman imaging spectrum

Splitting of X-ray Diffraction Peak in (ge:Sio2)/sio2 Multilayers

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Generation and distribution of residual stress during nano-grinding of monocrystalline silicon

Phonon Confinement in Stressed Silicon Nanocluster