Abstract:The residual stress distribution induced by nanosecond UV laser irradiation on the surface of SiC single crystal was detected through X-ray stress measurement method in this manuscript. In order to explain the generation mechanism of the residual stresses, the surface morphology of the laser ablation zone was characterized by laser scanning confocal microscopy. Besides, the material compositions of the ablation zone were also observed by using energy dispersive X-ray spectrometer. The measurement results indicated that tensile stress distribution existed around the laser-irradiated zone, while the center position of the laser spot had the smaller residual stresses. There were obvious bulges at the ablation zone margin, which may be caused by the melting of the material and the splashing and re-solidification of molten material in the ablation hole. In addition, there exists oxidation phenomenon in the irradiated region by comparing the EDS results of laser irradiated and unirradiated regions. This suggested that the temperature reached its melting point and photothermal ablation occurred when laser irradiated on the surface of the silicon carbide specimen. Therefore, it can be concluded that the existence of residual stresses was related to the local thermal expansion caused by laser irradiation. And the residual stresses at the marginal zone had the larger tensile stresses because of the transverse extrusion effect.

X-ray stress measurement of SiC single-crystal induced by laser ablation