Abstract:Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environment-in contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS.

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Electron–acoustic Phonon Interaction and Mobility in Stressed Rectangular Silicon Nanowires

Mechanical Properties of Silicon Nanowires with Native Oxide Surface State

Surface Stress Effects On The Yield Strength In Nanotwinned Polycrystal Face-Centered-Cubic Metallic Nanowires

Growth Of Metal And Metal Oxide Nanowires Driven By The Stress-Induced Migration

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Mechanical Behaviors of MoS Nanowires under Tension from Molecular Dynamics Simulations

Effect of Surface Stress on the Stiffness of Micro/nanocantilevers: Nanowire Elastic Modulus Measured by Nano-Scale Tensile and Vibrational Techniques

A New Characterization Approach to Study the Mechanical Behavior of Silicon Nanowires

MP-16 the Effect of Cooling Process on Copper Oxide Nanowires Generated by Stress-Induced Method

Non-uniaxial Stress-Assisted Fabrication of Nanoconstriction on Vertical Nanostructured Si.

Investigation of the Bending Behavior in Silicon Nanowires: A Nanomechanical Modeling Perspective

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors

Probing Stress States in Silicon Nanowires During Electrochemical Lithiation Using In Situ Synchrotron X-Ray Microdiffraction

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Effect of oxidation on mechanical properties of copper nanowire: A ReaxFF (reactive force field) molecular dynamics study

Superior electron transport of ultra-thin SiC nanowires with one impending tensile monatomic chain