Abstract:Superlattice-like (SLL) phase-change film is considered to be a promising phase-change material because it provides more controllabilities for the optimization of multiple performances of phase-change films. However, the mechanism by which SLL structure affects the properties of phase-change films is not well-understood. Here, four SLL phase-change films [Ge8Sb92(15 nm)/Ge (x nm)](3) with different x are fabricated. Their behaviors of crystallization are investigated by measuring sheet resistance and coherent phonon spectroscopy, which show that the crystallization temperature (T-C) of these films increases anomalously with x, rather than decreases as the interfacial effects model predicted. A new stress effect is proposed to explain the anomalous increase in T-C with x. Raman spectroscopy reveals that Raman shifts of all phonon modes in SLL films deviate from their respective standard Raman shifts in stress-free crystalline films, confirming the presence of stress in SLL films. It is also shown that tensile and compressive stresses exist in Ge and Ge8Sb92 layers, respectively, which agrees with the lattice mismatch between the Ge and Ge8Sb92 constituent layers. It is also found that the stress reduces with increasing x. Such a thickness dependence of stress can be used to explain the increase in crystallization temperature of four SLL films with x according to stress-enhanced crystallization. Our results reveal a new mechanism to affect the crystallization behaviors of SLL phase-change films besides interfacial effect. Stress and interfacial effects actually coexist and compete in SLL films, which can be used to explain the reported anomalous change in crystallization temperature with the film thickness and cycle number of periods in SLL phase-change films.

Splitting of X-Ray Diffraction Peak in (ge : Sio2)/Sio2 Multilayers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Strains in Si Substrate Induced by Formation of Ge Islands

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Formation Mechanism of Ge Nanocrystals Embedded in SiO2studied by Fluorescence X-Ray Absorption Fine Structure

Evolution of Mosaic Structure in Si0.7ge0.3 Epilayers Grown on Si(001) Substrates

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

EFFECT OF LASER ON FORMATION OF Ge NANOCRYSTALS EMBEDDED IN SiO 2

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Annealing behavior of Si1-xGex/Si heterostructure formed by Ge+ implantation with X-ray diffraction

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered Gesio Ternary Precursor

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Mechanism of Nano-Structuring Manipulation of the Crystallization Temperature of Superlattice-like [Ge<sub>8</sub>Sb<sub>92</sub>/Ge]<sub>3</sub> Phase-Change Films

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique