Abstract:Ge nanocrystals (Ge-ncs) embedded in SiO2 superlattices were prepared by in situ low temperature annealing. The formation of size controlled nanocrystals was demonstrated by Raman scattering, X-ray diffraction and transmission electron microscopy measurements. A core–shell structure was observed in the in situ grown Ge-ncs as a result of the lower annealing temperatures. The in situ annealing process also produced significant compressive stress in the superlattices, and the calculation result shows that the hydrostatic pressure induced by the compressive stress was about 2.55GPa for the nanocrystals with average size of 7.1nm. The optical absorption edges of the in situ grown superlattices moved to lower wavelength as crystallite size decreased. The presence of Ge-ncs enhanced the film absorption at short wavelength and the absorption coefficient was found to increase in superlattices containing larger nanocrystals. The superlattices exhibited optical band gap energies larger than that of bulk Ge and a blueshift of energies was observed with the decrease of crystallite size. These features are tentatively explained by quantum confinement effect in the Ge-ncs. Our results indicate that in situ low temperature grown Ge-ncs and superlattices are promising candidates for the fabrication of nanoscale devices on low cost substrates.

Formation Mechanism of Ge Nanocrystals Embedded in SiO2studied by Fluorescence X-Ray Absorption Fine Structure

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Growth of Embedded Ge Nanocrystals on Different Substrates

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered Gesio Ternary Precursor

Synthesis of Ge nanocrystals in thermal SiO2 films by Ge+ ion implantation

Structure and optical properties of SiO2 films containing Ge nanocrystallites

Fabrication of Multilayered Ge Nanocrystals Embedded in SiOxGeNy Films

Structural, mechanical and optical properties of Ge nanocrystals embedded in superlattices fabricated by in situ low temperature annealing

Fabrication of multilayered Ge nanocrystals by magnetron sputtering and annealing.

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Preparation of Multilayered Ge Nanocrystals by Magnetron Sputtering and Annealing Method

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Optical Properties of Multilayered Ge Nanocrystals Embedded in SiOx GeNy Thin Films

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Formation of Ge Nanoclusters on Si(111)-7×7 Surface at High Temperature

Raman scattering and room-temperature visible photoluminescence from Ge nanocrystals embedded in SiO2 thin films

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing