Abstract:The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth of Embedded Ge Nanocrystals on Different Substrates

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

A New Method for Preparing Ge Nano-Crystallites Embedded in Siny Matrices

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

A New Approach for Synthesizing Ge Quantum Crystallites Embedded in A Sin(X) Films

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Twinning Defects in Spherical GeSi Alloy Nanocrystals

Semiconductor Nanocrystals Formed in SiO2 by Ion Implantation

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Luminescent Ge Nanocrystallites Embedded In A-Sio2 Films

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Splitting of X-ray Diffraction Peak in (ge:Sio2)/sio2 Multilayers

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures