Abstract:Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core-shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core-shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core-shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag-Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. This study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Semiconductor Nanocrystals Formed in SiO2 by Ion Implantation

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Growth of Embedded Ge Nanocrystals on Different Substrates

Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Formation of SiC-surface layer by ion implantation

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Structural and Electrical Characteristics of Ge Nanoclusters Embedded in Al2o3 Gate Dielectric

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Recrystallization properties of polycrystalline GeSi on SiO2