Abstract:Si 1-x Ge x alloy nanocrystals (NCs) are a class of benign semiconductors that show size and composition-tunable energy gaps and promising optical properties because of the lattice disorder. The random distribution of elements within the alloys can lead to efficient light-matter interactions, making them attractive for Si-compatible optoelectronic devices, transistors, charge storage, and memory applications. However, the fabrication of discrete, quantum-confined alloys has proven a challenging task. Herein, we report solid-state co-disproportionation of a hydrogen silsesquioxane (HSQ)/GeI 2 composite precursor to produce homogeneous Si 1-x Ge x NCs with control over diameter (5.9 ± 0.7 – 7.8 ± 1.1 nm) and composition (x = 0 – 14.4%) with strong size confinement effects and visible to near IR absorption and emission properties. As-synthesized alloys show an expanded diamond cubic Si structure, a systematic red-shift of Si-Si Raman peak, and emergence of Si-Ge/Ge-Ge peaks with increasing Ge, consistent with the admixture of isovalent elements. Surface analysis of alloys reveals Si 0 /Ge 0 core and Si n+ /Ge n+ surface species and efficient surface functionalization with alkyl ligands via thermal hydrosilylation and/or hydrogermylation. Alloy NCs exhibit absorption onsets (2.26 – 1.92 eV), indirect (1.53 – 1.80 eV) and direct (2.88 – 2.47 eV) energy gaps, and photoluminescence (PL) maxima (1.40 – 1.27 eV) that can be tuned by manipulating the diameter and/or composition. The experimental PL energies are consistent with those predicted by density functional theory (DFT) suggesting that the PL originates from NC core electronic transitions. The facile low-temperature solid-state synthesis and control over physical properties realized in this study will allow discrete Si 1-x Ge x NCs to emerge as low to nontoxic, earth-abundant, and Si-compatible nanostructures for a broad range of electronic and photonic technologies.

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Solid-State Synthesis of Si1-xGex Nanoalloys with Composition-Tunable Energy Gaps and Visible to Near Infrared Optical Properties

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

Silicon nanocrystals synthesized using very high frequency non-thermal plasma and their application in photovoltaics

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Light Emission from Si Nanoclusters Formed at Low Temperatures

Luminescent Ge Nanocrystallites Embedded In A-Sio2 Films

Characterization of Excimer Laser Annealed Polycrystalline Si1−xGex Alloy Thin Films by X-Ray Diffraction and Spectroscopic Ellipsometry

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals