Abstract:The local structure of Ge quantum dots (QD's) self-assembled on Si(100) has been probed by extended x-ray absorption fine-structure and x-ray absorption near-edge structure spectroscopies. We found that in the uncapped QD's, Ge is partially oxidized (similar to35%) while the other part (similar to40%) alloys with Si leaving only similar to25% as a pure Ge phase. In the Si-capped dots the structure strongly depends on the growth temperature. For QD's grown at a rather high temperature of 745 degreesC, Ge is strongly intermixed with silicon forming a Ge-Si solid solution. The fraction of Ge atoms existing as a pure Ge phase does not exceed 10%. In the QD's grown at a lower temperature (510-550 degreesC), on the other hand, the Ge-rich phase clearly exists. The Ge-Ge bond length in the uncapped dots is close to the bulk value of Ge, indicating elastic relaxation of the misfit strain. The Ge-Si bond length in the capped QD's grown at 745 degreesC approaches the bulk value of Si, revealing compressive strain in the buried Si/Ge dot structures. In QD's grown at lower temperatures the Ge-Ge bond length equals 2.42 Angstrom indicating a small compressive strain. We also found that the structural disorder is higher in the uncapped samples.

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Growth of Embedded Ge Nanocrystals on Different Substrates

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

A New Method for Preparing Ge Nano-Crystallites Embedded in Siny Matrices

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Formation of Ge-S bonds from AOT-coated GeO2 nanoparticles at high temperature: An in situ heating EXAFS investigation

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization