Abstract:Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core-shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core-shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core-shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag-Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. This study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.

Formation of Ge-S bonds from AOT-coated GeO2 nanoparticles at high temperature: An in situ heating EXAFS investigation

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

In-situ heating study on the structural change of surfactant-templated germanium oxide mesostructure.

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Synthesis and Characterization of Nano/micro-Structured Crystalline Germanium Dioxide with Novel Morphology

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Structure of Ge–O complexes in Czochralski silicon

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

High-pressure EXAFS Study of Vitreous GeO 2 Up to 44 GPa

Synthesis of Germanium Oxide Mesostructures with a New Intermediate State

Stress-dependent Transformation of Interstitial Oxygen in Processed Ge-doped Cz-Si

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Germanate With Three-Dimensional 12 X 12 X 11-Ring Channels Solved By X-Ray Powder Diffraction With Charge-Flipping Algorithm

Single-Crystalline Germanium Nanocrystals via a Two-Step Microwave-Assisted Colloidal Synthesis from GeI4

Effective Method for Preparation of Oxide-Free Ge2sb2te5 Surface: an X-Ray Photoelectron Spectroscopy Study

Synthesis and Characterization of Si/Ge Composite Nanostructures