Complete remission of acute promyelocytic leukemia in a very elderly patient after treatment with low dose arsenic trioxide and sequential retinoic acid: a case report

Jie Lin,Hongli Zhu,Su-xia Li,Hui Fan,Xuechun Lu

DOI: https://doi.org/10.1007/s00277-013-1791-4

2014-02-01

Annals of Hematology

Abstract:

What problem does this paper attempt to address?

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Heqing Yang,Xingjun Wang,Huazhong Shi,Fujian Wang,Xiaoxiao Gu,Xi Yao

DOI: https://doi.org/10.1016/S0022-0248(01)02158-3

IF: 1.8

2002-01-01

Journal of Crystal Growth

Abstract:Ge nanocrystals embedded in SiO2 glasses were prepared by an easy sol–gel method. The gels synthesized through hydrolysis of Si(OC2H5)4 and 3-trichloro-germaniumpropanoic acid (Cl3–Ge–C2H4–COOH) were heated at 600°C for 10h in air atmosphere to form GeO2–SiO2 glasses. The gel-glasses were further heated at 500–700°C in H2 gas atmosphere, in which Ge4+ were reduced to precipitate cubic Ge nanocrystals. The size of Ge crystals is estimated to be from 1 to 13nm according to the XRD and TEM. The optical absorption edge shifts to higher energy with decrease in the content of Ge in the starting materials, and in the heating temperature and time in H2 gas atmosphere. This phenomenon is interpreted in terms of a quantum confinement effect of electrons and holes in the Ge nanocrystals.
Preparation of Ge nanocrystals via ultrasonic solution reduction

H.P. Wu,J.F. Liu,Y.W. Wang,Y.W. Zeng,J.Z. Jiang

DOI: https://doi.org/10.1016/j.matlet.2005.10.063

IF: 3

2006-04-01

Materials Letters

Abstract:Germanium nanocrystals, ranging from 3 to 10 nm with a narrow size distribution, can be synthesized by an inexpensive, simple ultrasonic solution reduction method. This is based on the reduction of GeCl4 by metal hydride or alkaline in ambient condition. Effects of reduction agent, reaction condition and the concentration of GeCl4 on the formation of germanium nanocrystals were investigated. The morphology and the crystal structure of Ge nanocrystals obtained at different conditions were characterised by transmission electron microscope and selected area electron diffraction. Possible mechanisms for the formation of Ge nanocrystals were discussed.

materials science, multidisciplinary,physics, applied
Solution Synthesis of Germanium Nanocrystals: Success and Open Challenges

Daniele Gerion,Natalia Zaitseva,Cheng Saw,Maria Francesca Casula,Sirine Fakra,Tony Van Buuren,Giulia Galli

DOI: https://doi.org/10.1021/nl035231t

IF: 10.8

2004-03-13

Nano Letters

Abstract:We present a two-step synthesis route that yields nanometer-size crystalline germanium in the form of a black powder. It relies on high temperature decomposition of tetraethylgermane (TEG) in organic solvents. The presence of pure germanium with diamond structure is unambiguously attested by powder XRD measurements. Low-resolution TEM indicates that the particles are between ∼5 to 30 nm in size, depending on the synthesis conditions. The as-synthesized Ge powders can be stored in air for months and no oxidation occurs. The Ge powders are sparingly soluble in conventional solvents because Ge nanocrystals are likely embedded in a matrix composed mainly of CC, C−C, and C−H bonds. The presence of residual organic byproducts impedes probing of the optical properties of the dots. Also, we discuss drawbacks and open challenges in high-temperature solution synthesis of Ge nanocrystals that could also be faced in the synthesis of Si nanocrystals. Overall, our results call for a cautious interpretation of reported optical properties of Ge and Si nanocrystals obtained by high-temperature solution methods.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Recent advances in germanium nanocrystals: Synthesis, optical properties and applications

Darragh Carolan

DOI: https://doi.org/10.1016/j.pmatsci.2017.07.005

IF: 48.165

2017-10-01

Progress in Materials Science

Abstract:Germanium nanocrystals (Ge NCs) have recently attracted renewed scientific interest as environmentally friendlier alternatives to classical II–VI and IV–VI QDs containing toxic elements such as Hg, Cd and Pb. Importantly, Ge NCs are nontoxic, biocompatible, and electrochemically stable. An essential requirement is the ability to prepare Ge NCs with narrow size distributions and well characterized surface chemistry, as these define many of their photophysical properties. However, a thorough discussion on these criteria has not been achieved to date. Here, size, surface control, and mechanisms for light emission in Ge NCs are discussed and their exciting recent applications are highlighted. The beneficial properties of Ge NCs suggest that this material can improve the performance of numerous devices like solar cells, photodetectors, and lithium ion batteries.

materials science, multidisciplinary
Facile Synthesis of Germanium Nanoparticles with Size Control: Microwave versus Conventional Heating

Elayaraja Muthuswamy,Andrew S. Iskandar,Marlene M. Amador,Susan M. Kauzlarich

DOI: https://doi.org/10.1021/cm302229b

IF: 10.508

2012-11-27

Chemistry of Materials

Abstract:A facile size-controlled synthesis (microwave/conventional) of quasi-spherical germanium nanoparticles is reported. Oleylamine serves as a solvent, a binding ligand, and a reducing agent in the synthesis. Reactions were carried out with microwave-assisted heating, and the results have been compared with those produced by conventional heating. Germanium iodides (GeI4, GeI2) were used as the Ge precursor, and size control in the range of 4–11 nm was achieved by controlling the ratio of Ge4+/Ge2+ in the precursor mix. Longer reaction times and higher temperatures were also observed to have an effect on the nanoparticle size distribution. Microwave heating resulted in crystalline nanoparticles at lower temperatures than conventional resistive heating because of the ability of germanium iodides to convert electromagnetic radiation directly to heat. The reported approach for germanium nanoparticle preparation avoids the use of strong reducing agents (LiAlH4, n-BuLi, NaBH4) and HF for etching and, thus, can be considered simple, safe, and amenable to industrial-level scaleup. The as-prepared nanoparticles are a stable dispersion (hexane or toluene) for weeks when stored under an inert atmosphere (N2/Ar). The stability of the colloidal dispersion was observed to be dependent on the nanoparticle size, with smaller nanoparticles exhibiting longer stability. On exposure to ambient conditions, oxidation occurs over a period of time and results in slow precipitation of the nanoparticles. The nanoparticles have been characterized by powder X-ray diffraction (PXRD), transmission electron microscopy (TEM), and spectroscopic techniques (UV-Vis-NIR, FTIR, Raman).

materials science, multidisciplinary,chemistry, physical
Synthesis and Characterization of Nano/micro-Structured Crystalline Germanium Dioxide with Novel Morphology

XiaoYan Wang,Lian Duan,GuiFang Dong,Peng Wei,Wei Wang,LiDuo Wang,Yong Qiu

DOI: https://doi.org/10.1007/s11434-009-0463-1

2009-01-01

Chinese Science Bulletin

Abstract:Nano/micro-structured germanium oxide (GeO2) was prepared using GeCl4 and KOH by a simple solution method in alkalic alcoholic solution. Different morphologies of GeO2 were obtained by changing the reaction conditions. The effects of the reaction time, the concentration of the reactants, the reaction temperature and the dispersant upon the morphology of the deposited GeO2 have been investigated. The products were detected by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM) and transmission electron microscope (TEM). Novel cross-like structures were obtained by using n-butylamine as the dispersant. The formation of the cross-like structures has been discussed and a solution-liquid-solid (SLS) mechanism was proposed.
Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Jiafen Ding,Haochen Tong,Jia Long,Rui Zhang,Bolei Zhang,Chong Wang,Yu Yang,Rongfei Wang,Shili Shen,Kai Xiong,Jie Yang,Hongchen Pan,Feng Qiu

DOI: https://doi.org/10.1021/acsaelm.1c00373

IF: 4.494

2021-08-10

ACS Applied Electronic Materials

Abstract:Material crystallinity is paramount in determining the photoelectric performances and device applications. Moreover, a high-quality crystalline layer, especially a multilayer film or a heteroepitaxial film, is continuously explored to cater for low defect density and ultrahigh structure integrity as well as low cost, yet is challenging. In this study, the crystallization effect of Ge/Si heteroepitaxial nanofilms (<100 nm) is investigated in detail to pursue low crystallization temperature and the underlying mechanism. It is demonstrated that the crystallinity and the crystallographic orientation of the underlying layer can tune the crystallization behavior of the upper-layer film. This interfacial inducing effect on crystallization originating from the buffer layer is verified on inversed architecture of the Si/Ge film and is proposed to be the microcrystal-induced crystallization (MIC) effect. Based on a point-defect model describing an order/disorder microcrystal structure, the MIC effect is flexibly supported by the results of binding energy and charge transfer via first-principles calculations for the first time. This work also provides a facile strategy and theoretical support to prepare high-crystalline multilayer films or intact crystals for urgent microelectronics and optoelectronics applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00373.Ge–Ge peak fitting and crystallinity of the Ge/a-Si specimen in Raman spectra, AFM images of samples prepared at different conditions, Raman spectra of different samples, crystallinity trend and the graph of root-mean-square (RMS) surface roughness, XRD spectra and the X-ray diffraction data of the 300 nm Ge film, unoptimized atomic structures of Ge microcrystalline, optimized atomic structures and differential charge densities, and specific values of binding energy and charge transfer (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Tuning the Photoluminescence of Germanium Nanocrystals through Surface Bound Functional Groups

Darragh Carolan,Hugh Doyle

DOI: https://doi.org/10.1002/ppsc.201600303

2016-12-23

Abstract:A room temperature, solution phase method for production of size monodisperse germanium nanocrystals (Ge NCs) terminated with different chemical functionalities (epoxy, acetate, amine, carboxylic acid, and alkyl) is reported. Ge NC photoluminescence spectra show that the emission can be tuned from the UV to the blue/green through choice of ligand.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Xiao Qi,Karen C Bustillo,Susan M Kauzlarich

DOI: https://doi.org/10.1063/5.0144742

2023-04-28

Abstract:Crystallization of amorphous materials by thermal annealing has been investigated for numerous applications in the fields of nanotechnology, such as thin-film transistors and thermoelectric devices. The phase transition and shape evolution of amorphous germanium (Ge) and Ag@Ge core-shell nanoparticles with average diameters of 10 and 12 nm, respectively, were investigated by high-energy electron beam irradiation and in situ heating within a transmission electron microscope. The transition of a single Ge amorphous nanoparticle to the crystalline diamond cubic structure at the atomic scale was clearly demonstrated. Depending on the heating temperature, a hollow Ge structure can be maintained or transformed into a solid Ge nanocrystal through a diffusive process during the amorphous to crystalline phase transition. Selected area diffraction patterns were obtained to confirm the crystallization process. In addition, the thermal stability of Ag@Ge core-shell nanoparticles with an average core of 7.4 and a 2.1 nm Ge shell was studied by applying the same beam conditions and temperatures. The results show that at a moderate temperature (e.g., 385 °C), the amorphous Ge shell can completely crystallize while maintaining the well-defined core-shell structure, while at a high temperature (e.g., 545 °C), the high thermal energy enables a freely diffusive process of both Ag and Ge atoms on the carbon support film and leads to transformation into a phase segregated Ag-Ge Janus nanoparticle with a clear interface between the Ag and Ge domains. This study provides a protocol as well as insight into the thermal stability and strain relief mechanism of complex nanostructures at the single nanoparticle level with atomic resolution.
Sonication-assisted synthesis of semiconducting atomic crystals of germanium monoselenide: An isostructural and isoelectronic analog of black phosphorous

Yuting Ye,Qiangbing Guo,Xiaofeng Liu,Chang Liu,Junjie Wang,Yi Liu,Jianrong Qiu

DOI: https://doi.org/10.48550/arXiv.1701.06285

2017-01-23

Materials Science

Abstract:Monochalcogenides of germanium (or tin) are considered as stable isoelectronic and isostructural analogue of black phosphorous. Their two-dimensional (2D) forms have been just predicted to shown strong thickness-dependent physical properties, and even indirect to direct band gap crossover at the monolayer limit. Here, we demonstrate the synthesis of atomically thin GeSe by direct sonication-assisted exfoliation of bulk microcrystalline powders in solvents. The exfoliated few-layer GeSe sheets characterize high crystallinity with lateral sizes over 100 nm and, importantly, strong resistance against oxidation and degradation in ambient conditions. Density functional theory calculation combined with optical characterizations confirm the layer-number dependent optical bandgap, which, for few-layer sheets, is optimal for solar light harvesting, and promising for relevant applications, such as optoelectronics and photonics.
Synthesis of Germanium Nanowires

M. Ge,J. F. Liu,H. Wu,C. Yao,Y. Zeng,Z. D. Fu,S. L. Zhang,J. Z. Jiang

DOI: https://doi.org/10.1021/jp0712553

2007-01-01

Abstract:We report here a novel and simple method, without using any seeds or catalysts, to synthesize single-crystal germanium nanowires with tunable 10-115 nm diameters and of 10-20 Am length by the decomposition of a precursor [( CH3(CH2)(7)CH=CH(CH2)(7)CH2NH2)(4)Ge](4+),(Cl-)4( TOG) at 36 degrees 0C in trioctylamine. The diameter of Ge nanowires can be controlled by varying the concentration of TOG in solution.
Photo-induced cation exchange reaction of germanium chalcogenide nanocrystals synthesized using gas-phase laser photolysis reaction.

Chan Su Jung,S. Back,D. Jang,C. Kim,Yoon Myung,H. Im,Y. Cho,Jeunghee Park,H. Kim

DOI: https://doi.org/10.1039/c2cc37513c

IF: 4.9

2013-01-07

Chemical Communications

Abstract:Germanium chalcogenide GeS(x)Se(1-x) nanocrystals (NC) were synthesized using a novel gas-phase laser photolysis reaction. The composition was simply controlled by the partial pressure of precursors in a closed reactor. Remarkably, these ligand-free NC undergo the photo-induced cation exchange reaction to produce a series of Cd, Zn, Pb, and Ag chalcogenide NC in aqueous solution, which is governed by the thermodynamic driving force based on solubility.

Chemistry,Medicine,Materials Science
Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

X D Pi,U Kortshagen

DOI: https://doi.org/10.1088/0957-4484/20/29/295602

IF: 3.5

2009-01-01

Nanotechnology

Abstract:The composition, structure, light emission and oxidation kinetics of Si1-xGex alloy nanocrystals (similar to 3 nm in diameter) synthesized by nonthermal plasma have been investigated. It is found that the synthesized nanocrystals are neither a mixture of Si nanocrystals and Ge nanocrystals nor Si-Ge (Ge-Si) core-shell nanocrystals. The H coverage at the surface of Si1-xGex nanocrystals decreases with the increase of the Ge atomic fraction. The incorporation of Ge enhances the oxidation of Si1-xGex nanocrystals when the atomic fraction of Ge is < 0.5. No shift in photoluminescence from hydrosilylated Si1-xGex nanocrystals is observed when the atomic fraction of Ge varies between 0 and 0.1, indicating that the bandgap of Si nanocrystals is similar to that of Ge nanocrystals at a nanocrystal size of 3 nm.
Single-Crystal Colloidal Nanosheets of GeS and GeSe

Dimitri D. Vaughn,Romesh J. Patel,Michael A. Hickner,Raymond E. Schaak

DOI: https://doi.org/10.1021/ja107520b

IF: 15

2010-10-13

Journal of the American Chemical Society

Abstract:Narrow-band-gap IV-VI semiconductors offer promising optoelectronic properties for integration as light-absorbing components in field-effect transistors, photodetectors, and photovoltaic devices. Importantly, colloidal nanostructures of these materials have the potential to substantially decrease the fabrication cost of solar cells because of their ability to be solution-processed. While colloidal nanomaterials formed from IV-VI lead chalcogenides such as PbS and PbSe have been extensively investigated, those of the layered semiconductors SnS, SnSe, GeS, and GeSe have only recently been considered. In particular, there have been very few studies of the germanium chalcogenides, which have band-gap energies that overlap well with the solar spectrum. Here we report the first synthesis of colloidal GeS and GeSe nanostructures obtained by heating GeI(4), hexamethyldisilazane, oleylamine, oleic acid, and dodecanethiol or trioctylphosphine selenide to 320 °C for 24 h. These materials, which were characterized by TEM, SAED, SEM, AFM, XRD, diffuse reflectance spectroscopy, and I-V conductivity measurements, preferentially adopt a two-dimensional single-crystal nanosheet morphology that produces fully [100]-oriented films upon drop-casting. Optical measurements indicated indirect band gaps of 1.58 and 1.14 eV for GeS and GeSe, respectively, and electrical measurements showed that drop-cast films of GeSe exhibit p-type conductivity.

chemistry, multidisciplinary
Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Y. Lambert,Y. Gao,X.D. Pi,B. Grandidier,D. Stiévenard

DOI: https://doi.org/10.1016/j.physe.2017.05.018

2017-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:We investigate the photoconductivity of a n+-ZnO/n-Ge NCs/p+-GaAs junction where the active layer consists of heavily n-doped Ge NCs synthesized in the gas phase. Measurement of a significant current at energies smaller than the band gap of GaAs demonstrates the photogeneration of charge carriers by the Ge NCs. From the correlation of the NC size with the absorption threshold, a narrowing of the direct band gap in the Ge NC thin film is obtained and attributed to the heavy doping of the Ge NCs. A remarkably high electrical activation of ~15% is found for the incorporated P impurities in the NCs.
A New Method for Preparing Ge Nano-Crystallites Embedded in Siny Matrices

Chen Kunji,Qu Xuexuan,Huang Xinfan,Li Zhifeng,Feng Duan

DOI: https://doi.org/10.1557/proc-358-111

1994-01-01

MRS Proceedings

Abstract:We report a new method for synthesizing Ge nano-crystallites embedded in SiNy film matrices. On the basis of the effect of the reactant precursors and preferential chemical bonding of Si-N and Ge-Ge, thin films with Ge clusters embedded in SiNy matrices have been prepared in the PECVD system with reactant gases of SiH4, GeH4 and NH3 mixed in the hydrogen plasma. The as-deposited films were then crystallized by Ar ion laser annealing or thermal annealing technique to form nanometer-sized Ge crystallites. The composition and microstructures of these new type of sample were characterized by infrared absorption spectra, transmission electron microscopy, X-ray diffraction and Raman scattering spectra. The results indicated that the average size of Ge crystallites was estimated to be 2–20 nm depending on the deposition and annealing parameters and can be controlled by a designed manner.
Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

Yaocheng Liu,Michael D. Deal,James D. Plummer

DOI: https://doi.org/10.1149/1.1946368

IF: 3.9

2005-01-01

Journal of The Electrochemical Society

Abstract:A rapid melt growth method was developed to produce Ge crystals including Ge pillars, nanowires, and Ge-on-insulator. Amorphous Ge was deposited and patterned, then crystallized by melting and solidifying using Si substrates for seeding. Self-aligned SiO2 microcrucibles were used to contain the Ge liquid during the crystallization anneal. The misfit defects were terminated within small regions around the seeding windows by a necking mechanism. Crystallization calculations showed that very high epitaxial growth velocity can be achieved when the temperature of Ge liquid is lower than but close to its melting point, while the random unseeded nucleation rate is very low in the same temperature range. High-quality Ge nanowires and Ge-on-insulator structures are produced with a simple and robust process. The rapid melt growth technique works very well with a variety of film thickness, including that of nanometer ultrathin structures. The surface smoothness obtained by Ge deposition is retained during crystallization and the film thickness is also controlled by deposition.

electrochemistry,materials science, coatings & films
In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots

M. Luong,E. Robin,N. Pauc,P. Gentile,M. Sistani,A. Lugstein,M Spies,B Fernandez,M. den Hertog

DOI: https://doi.org/10.48550/arXiv.2001.09026

2020-01-24

Applied Physics

Abstract:Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a metal and a semiconductor, that can become a quantum dot if the size becomes sufficiently small. In the search for high performance devices without variability, it is of high interest to allow deterministic fabrication of nanowire quantum dots, avoiding sample variability and obtaining atomic scale precision on the fabricated dot size. In this paper, we present a reliable fabrication process to produce sub-10 nm Ge quantum dots (QDs), using a combination of ex-situ thermal annealing via rapid thermal annealing (RTA) and in-situ Joule heating technique in a transmission electron microscope (TEM). First we present in-situ direct joule heating experiments showing how the heating electrode could be damaged due to the formation of Al crystals and voids at the vicinity of the metal/NW contact, likely related with electro-migration phenomena. We show that the contact quality can be preserved by including an additional ex-situ RTA step prior to the in-situ heating. The in-situ observations also show in real-time how the exchange reaction initiates simultaneously from several locations underneath the Al contact pad, and the Al crystal grows gradually inside the initial Ge NW with the growth interface along a Ge(111) lattice plane. Once the reaction front moves out from underneath the contact metal, two factors jeopardize an atomically accurate control of the Al/Ge reaction interface. We observed a local acceleration of the reaction interface due to the electron beam irradiation in the transmission electron microscope as well as the appearance of large jumps of the interface in unpassivated Ge wires while a smooth advancement of the reaction interface was observed in wires with an Al2O3 protecting shell on the surface. Carefully controlling all aspects of the exchange reaction, we demonstrate a fabrication process combining ex-situ and in-situ heating techniques to precisely control and produce axial Al/Ge/Al NW heterostructures with an ultra-short Ge segment down to 8 nanometers. Practically, the scaling down of Ge segment length is only limited by the microscope resolution.
Synthesis and Properties of Germanium Nanoparticles in Inverse Micellar Solutions. The Role of Initial Events of Ion-Reduction Reactions

A. A. Revina,O. V. Souvorova,Yu. V. Smirnov,Yu. S. Pavlov

DOI: https://doi.org/10.1134/S2070205122030170

2022-08-23

Protection of Metals and Physical Chemistry of Surfaces

Abstract:Physicochemical properties of stable nanoscale Ge particles have been widely investigated by means of radiation-chemical and chemical-reduction reactions of germanium ions in inversely micellar solutions, as well as various methods for registering the resulting nanoparticles, such as UV–Vis spectrophotometry (measurement of optical absorption and luminescence spectra) and AFM measurements. Depending on the concentration of components, the size of a water pool of inverse micelles, the storage time of samples, and the dose of ionizing radiation, the conditions for the formation of Ge NPs have been determined. Significant differences in the initial events of ion-reduction reactions have been revealed. The obtained results have confirmed the unique properties of polarized water in inverse-micellar solutions and the important role of the reducing properties of polarized water in various methods of the formation of Ge nanoparticles, including the processes of self-assembly and "molecular assembly" of metal and bimetal nanoparticles in the postreaction periods.

metallurgy & metallurgical engineering
Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Wensheng Yan,Zhongrui Li,Zhihu Sun,A. V. Kolobov,Shiqiang Wei

DOI: https://doi.org/10.1063/1.2644669

2007-01-01

Chinese Physics

Abstract:This paper reports that the Ge nanocrystals embedded in SiO2 matrix are grown on Si(100) and quartz–glass substrates, and the formation mechanism is systematically studied by using fluorescence x-ray absorption fine structure (XAFS). It is found that the formation of Ge nanocrystals strongly depends on the properties of substrate materials. In the as-prepared samples with Ge molar content of 60%, Ge atoms exist in amorphous Ge (about 36%) and GeO2 (about 24%) phases. At the annealing temperature of 1073 K, on the quartz–glass substrate Ge nanocrystals are generated from crystallization of amorphous Ge, rather than from the direct decomposition of GeO2 in the as-deposited sample. However, on the Si(100) substrate, the Ge nanocrystals are generated partly from crystallization of amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis reveals that about 10% of GeO2 in the as-prepared sample are permuted with Si wafer to form Ge nanocrystals.

Complete remission of acute promyelocytic leukemia in a very elderly patient after treatment with low dose arsenic trioxide and sequential retinoic acid: a case report

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Preparation of Ge nanocrystals via ultrasonic solution reduction

Solution Synthesis of Germanium Nanocrystals: Success and Open Challenges

Recent advances in germanium nanocrystals: Synthesis, optical properties and applications

Facile Synthesis of Germanium Nanoparticles with Size Control: Microwave versus Conventional Heating

Synthesis and Characterization of Nano/micro-Structured Crystalline Germanium Dioxide with Novel Morphology

Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Tuning the Photoluminescence of Germanium Nanocrystals through Surface Bound Functional Groups

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Sonication-assisted synthesis of semiconducting atomic crystals of germanium monoselenide: An isostructural and isoelectronic analog of black phosphorous

Synthesis of Germanium Nanowires

Photo-induced cation exchange reaction of germanium chalcogenide nanocrystals synthesized using gas-phase laser photolysis reaction.

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Single-Crystal Colloidal Nanosheets of GeS and GeSe

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

A New Method for Preparing Ge Nano-Crystallites Embedded in Siny Matrices

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots

Synthesis and Properties of Germanium Nanoparticles in Inverse Micellar Solutions. The Role of Initial Events of Ion-Reduction Reactions

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure