Abstract:Over the last decade SiGe has been proposed as a structural material for low thermal budget microelectromechanical systems (MEMS) that can be post-processed on top of standard CMOS driving and controlling electronics [1-6]. There are several ways to decrease the deposition temperature of SiGe and at the same time preserve the desired physical properties for MEMS as low electrical resistivity, high quality factor, economical growth rate and low mean stress and strain gradient. The conventional approach to reduce the crystallization thermal budget is to increase the germanium content to 60%, or more, using conventional Low Pressure Chemical Vapor Deposition (LPCVD) [1-3]. In this case highly conductive polycrystalline films can be realized, but the strain gradient is relatively high. This can be eliminated by furnace annealing at 450°C [2], which might introduce damage to the underlying circuits such as in the case of Cu/low k CMOS. This problem can be alleviated using excimer pulsed laser annealing [7, 8], which has been attractive for low thermal budget applications such as thin film transistors (TFT) [9], solar cells fabricated on glass substrates [10] and for monolithic integration of MEMS devices on top of standard driving electronics using SiGe as an active material [8, 11]. Also the use of hydrogenated microcrystalline SiGe allows for a low thermal budget [12]. In addition, metal induced crystallization has recently been proposed to enhance the crystallization of silicon at temperatures as low as 500°C, and the realized devices had outstanding performance compared to those employing conventional solid-phase crystallization [13]. This technique enhances crystallization by two methods. First, it has been observed that depositing SiGe on top of a thin Al or Ni layer, has a polycrystalline micro-structure close to the metal/ SiGe interface [11]. Annealing this film for a long period (is determined by the annealing temperature), results in metal diffusion and a subsequent crystallization of the film. Finally, when the metal is diffused completely through out the film, it can be etched away. The main disadvantage of this approach is that the mean stress is highly compressive and this might affect the functionality of surface micromachined structures [13].

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Self-Nucleation Free and Dimension Dependent Metal-Induced Lateral Crystallization of Amorphous Germanium for Single Crystalline Germanium Growth on Insulating Substrate

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy

Crucible-free Pulling of Germanium Crystals

Self‐Limiting Synthesis of Ultrathin Ge(110) Single Crystal via Liquid Metal

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing

Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization

Metal Induced Crystallization of SiGe at 370°C for Monolithically Integrated MEMS Applications

Control of Ge island coalescence for the formation of nanowires on silicon.

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

Cluster-Assisted Mesoplasma Chemical Vapor Deposition for Fast Epitaxial Growth of SiGe/Si Heterostructures: A Molecular Dynamics Simulation Study