Abstract:Si1 − yCy alloys have been grown on Si(001) by Si molecular beam epitaxy (MBE) under a low pressure of C2H4 at 600°C. In spite of relatively high carbon concentrations, estimated by X-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS), a good epitaxial relationship with the substrate is obtained as proved by cross-sectional transmission electron diffraction observations (XTED), reconstructed 2 × 1 low-energy electron diffraction (LEED) diagrams and Si 2p X-ray photoelectron diffraction (XPD) modulated polar patterns for the alloys with the cubic symmetry of the Si substrate. Nevertheless the simultaneous absences of relevant C 1s XPD features, significant strain induced X-ray diffraction (XRD) shifts and clear C-related local infrared (IR) or Raman modes, give rise to the question of the incorporation mode of C, different here from the often invoked substitutional mode in other Si1 − yCy alloys. Inspection by cross-sectional transmission electron microscopy (XTEM) of these samples with the lowest C-content shows regularly spaced contrast variations (striations), roughly parallel to the Sialloy interface with a periodicity of about 9 nm. High resolution micrographs reveal between the contrasted strips a nearly perfect and unstrained Si lattice, free of dislocations or SiC nanocrystal inclusions. With increasing C-concentrations, extended defects such as twins or stacking faults appear in the layer, generating roughness at the surface and the striations finally disappear. The striations may tentatively be accounted for pseudomorphic growth of new C-rich phases, theoretically suggested by Rücker et al. [H. Rücker, M. Methfessel, E. Bugiel and H.J. Osten, Phys. Rev. Lett. 72 (1994) 3578], matching the C-induced strain and allowing subsequent strain free Si-growth.

Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

Growth of silicon based germanium tin alloys

Silicon-germanium alloys and heterostructures: Optical and electronic properties

Novel chemical routes to silicon‐germanium‐carbon materials

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Growth of tin-free germanium carbon alloys using carbon tetrabromide (CBr4)

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

A Particular Epitaxial Si1 − Ycy Alloy Growth Mode on Si(001) Evidenced by Cross-Sectional Transmission Electron Microscopy

Island-growth of SiCGe films on SiC

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Synthesis of Epitaxial Si1 − Ycy Alloys on Si(001) with High Level of Non-Usual Substitutional Carbon Incorporation

Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Germanium crystals on silicon show their light