Abstract:Si 1-x Ge x alloy nanocrystals (NCs) are a class of benign semiconductors that show size and composition-tunable energy gaps and promising optical properties because of the lattice disorder. The random distribution of elements within the alloys can lead to efficient light-matter interactions, making them attractive for Si-compatible optoelectronic devices, transistors, charge storage, and memory applications. However, the fabrication of discrete, quantum-confined alloys has proven a challenging task. Herein, we report solid-state co-disproportionation of a hydrogen silsesquioxane (HSQ)/GeI 2 composite precursor to produce homogeneous Si 1-x Ge x NCs with control over diameter (5.9 ± 0.7 – 7.8 ± 1.1 nm) and composition (x = 0 – 14.4%) with strong size confinement effects and visible to near IR absorption and emission properties. As-synthesized alloys show an expanded diamond cubic Si structure, a systematic red-shift of Si-Si Raman peak, and emergence of Si-Ge/Ge-Ge peaks with increasing Ge, consistent with the admixture of isovalent elements. Surface analysis of alloys reveals Si 0 /Ge 0 core and Si n+ /Ge n+ surface species and efficient surface functionalization with alkyl ligands via thermal hydrosilylation and/or hydrogermylation. Alloy NCs exhibit absorption onsets (2.26 – 1.92 eV), indirect (1.53 – 1.80 eV) and direct (2.88 – 2.47 eV) energy gaps, and photoluminescence (PL) maxima (1.40 – 1.27 eV) that can be tuned by manipulating the diameter and/or composition. The experimental PL energies are consistent with those predicted by density functional theory (DFT) suggesting that the PL originates from NC core electronic transitions. The facile low-temperature solid-state synthesis and control over physical properties realized in this study will allow discrete Si 1-x Ge x NCs to emerge as low to nontoxic, earth-abundant, and Si-compatible nanostructures for a broad range of electronic and photonic technologies.

Novel chemical routes to silicon‐germanium‐carbon materials

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Metastable Ge1-xCx alloy nanowires

Germanium in Czochralski Silicon

Growth and doping of silicon carbide with germanium: a review

Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition

The structure of chemical vapor deposited silicon carbide

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Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide langmuir-blodgett films on silicon substrate

Solution Synthesis of Germanium Nanocrystals: Success and Open Challenges

Solid-State Synthesis of Si1-xGex Nanoalloys with Composition-Tunable Energy Gaps and Visible to Near Infrared Optical Properties

Synthesis of Epitaxial Si1 − Ycy Alloys on Si(001) with High Level of Non-Usual Substitutional Carbon Incorporation

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures

High quality Ge layers for Ge/SiGe quantum well heterostructures using chemical vapor deposition

Thermal evaporation and solution strategies to novel nanoarchitectures of silicon carbide