Abstract:Si1 − yCy alloys have been grown on Si(001) by Si molecular beam epitaxy (MBE) under a low pressure of C2H4 at 600°C. In spite of relatively high carbon concentrations, estimated by X-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS), a good epitaxial relationship with the substrate is obtained as proved by cross-sectional transmission electron diffraction observations (XTED), reconstructed 2 × 1 low-energy electron diffraction (LEED) diagrams and Si 2p X-ray photoelectron diffraction (XPD) modulated polar patterns for the alloys with the cubic symmetry of the Si substrate. Nevertheless the simultaneous absences of relevant C 1s XPD features, significant strain induced X-ray diffraction (XRD) shifts and clear C-related local infrared (IR) or Raman modes, give rise to the question of the incorporation mode of C, different here from the often invoked substitutional mode in other Si1 − yCy alloys. Inspection by cross-sectional transmission electron microscopy (XTEM) of these samples with the lowest C-content shows regularly spaced contrast variations (striations), roughly parallel to the Sialloy interface with a periodicity of about 9 nm. High resolution micrographs reveal between the contrasted strips a nearly perfect and unstrained Si lattice, free of dislocations or SiC nanocrystal inclusions. With increasing C-concentrations, extended defects such as twins or stacking faults appear in the layer, generating roughness at the surface and the striations finally disappear. The striations may tentatively be accounted for pseudomorphic growth of new C-rich phases, theoretically suggested by Rücker et al. [H. Rücker, M. Methfessel, E. Bugiel and H.J. Osten, Phys. Rev. Lett. 72 (1994) 3578], matching the C-induced strain and allowing subsequent strain free Si-growth.

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition

Influence of Growth Conditions on the Incorporation of Substitutional C in Si1-x-yGexCy Alloy on Si by Chemical Vapor Deposition Using C2H4

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Growth and Characterization of High Quality Si1-X-Ygexcy Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

Study of Strain in Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum／Chemical Vapor Depostion

Synthesis of Epitaxial Si1 − Ycy Alloys on Si(001) with High Level of Non-Usual Substitutional Carbon Incorporation

Influence of C on Ge Incorporation in the Growth of Ge-rich Ge1−x−ySixCy Alloys on Si (100)

The growth of Si1-yCy alloy on 6H-SiC homoepitaxial layers

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

Surface morphology study and electrical properties of Si1 - xCx on Si grown by low pressure chemical vapor deposition

Effcet of Annealing on Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum Chemical Vapor Deposition

A Particular Epitaxial Si1 − Ycy Alloy Growth Mode on Si(001) Evidenced by Cross-Sectional Transmission Electron Microscopy

The effects of carbon incorporation during GSMBE of Si1−yCy and Si1−x−yGexCy: growth dynamics and segregation

Analysis of the Growth and Properties of 4H-Si_(1-y)C_y Alloy

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

Defects and Strain in Ge x Si 1−x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition