Abstract:A great deal of interest is directed nowadays towards the development of innovative technologies in the field of quantum information and quantum computing, with emphasis on obtaining reliable qubits as building blocks. The realization of highly stable, controllable and accessible hole spin qubits is strongly dependent on the quality of the materials hosting them. Ultra-clean germanium/silicon-germanium heterostructures have been predicted and proven to be promising candidates and due to their large scalability potential, they are opening the door towards the development of realistic and reliable solid state, all-electric, silicon-based quantum computers. In order to obtain ultra-clean germanium/silicon-germanium heterostructures in a reverse grading approach, the understanding and control over the growth of Ge virtual substrates and thin films is key. Here, we present a detailed study on the growth kinetics, morphology, and crystal quality of Ge thin films grown via chemical vapor deposition by investigating the effects of growth temperature, partial pressure of the precursor gas and the use of Ar or H2 atmosphere. The presence of carrier gases catalyzes the deposition rate and induces a smoothening on the surfaces of films grown at low temperatures. We investigated the surface roughness and threading dislocation density as a function of deposition temperature, partial pressure and gas mixture. Ge thin films deposited by diluting GeH4 in Ar or H2 were employed as virtual substrates for the growth of full Ge/SiGe QW heterostructures. Their defect density was analyzed and their electric transport properties were characterized via Hall measurements. Similar results were obtained for both carrier gases used.

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Study of GeSi Alloy Deposition on Ge Substrate by Very Low-Pressure Chemical Vapor Deposition

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

Growth Kinetics Study of Sige Alloys Deposited by Rapid Thermal Process, Very Low Pressure Chemical Vapor Deposition

Simulation Model to Very Low Pressure Chemical Vapor Deposition of SiGe Alloy

Sige : H Thin Films Prepared By Plasma Assisted Reactive Thermal Chemical Vapor Deposition

Growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Stress Property Of Sige Alloy Deposited By Very Low Pressure Chemical Vapor Deposition

Chemical Vapor Deposition of Ge on GaN/Al2O3(0001) Substrates

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Influence of C on Ge Incorporation in the Growth of Ge-rich Ge1−x−ySixCy Alloys on Si (100)

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures