Abstract:A great deal of interest is directed nowadays toward the development of innovative technologies in the field of quantum information and quantum computing, with emphasis on obtaining reliable qubits as building blocks. The realization of highly stable, controllable, and accessible hole spin qubits is strongly dependent on the quality of the materials hosting them. Ultraclean germanium/silicon-germanium heterostructures have been predicted and proven to be promising candidates and, due to their large scalability potential, they are opening the door toward the development of realistic and reliable solid state, all-electric, silicon-based quantum computers. In order to obtain ultraclean germanium/silicon-germanium heterostructures in a reverse grading approach, the understanding and control over the growth of Ge virtual substrates and thin films is key. Here we present a detailed study on the growth kinetics, morphology, and crystal quality of Ge thin films grown via chemical vapor deposition by investigating the effects of growth temperature, partial pressure of the precursor gas, and the use of Ar or H2 atmosphere. The presence of carrier gases catalyzes the deposition rate and induces a smoothening on the surfaces of films grown at low temperatures. We investigated the surface roughness and threading dislocation density as a function of deposition temperature, partial pressure, and gas mixture. Ge thin films deposited by diluting GeH4 in Ar or H2 were employed as virtual substrates for the growth of full Ge/SiGe quantum well heterostructures. Their defect density was analyzed and their electric transport properties were characterized via Hall measurements. Similar results were obtained for both carrier gases used. https://doi.org/10.1103/PhysRevMaterials.8.066201 ©2024 American Physical Society

Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

Growth and doping of silicon carbide with germanium: a review

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures

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Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Influence of Growth Conditions on the Incorporation of Substitutional C in Si1-x-yGexCy Alloy on Si by Chemical Vapor Deposition Using C2H4

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

High quality Ge layers for Ge/SiGe quantum well heterostructures using chemical vapor deposition

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Sige : H Thin Films Prepared By Plasma Assisted Reactive Thermal Chemical Vapor Deposition