Abstract:We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2-4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission electron microscope, Raman, surface energy theory and dynamics theory, the photoelectric properties of QDs were characterized by photoluminescence (PL) spectra. The results showed that the growth mechanism of QDs conformed to Stranski-Krastanow mode, but the typical thickness of the wetting layer was nearly three times higher than those derived from conventional technologies such as molecular beam epitaxy, chemical vapor deposition, solid phase epitaxy and so on. Meanwhile, the shape evolution of QDs was very different from existing reports. The specific internal causes of these novel phenomena were analyzed and confirmed and reported in this paper. In addition, the AFM, Raman, and PL tests all indicated that the QDs grown when 3.4 nm Ge was deposited have the most excellent morphology, structure, and optoelectronic performance. Our work lays a foundation for further exploration of the controllable growth of QDs at high deposition rates, which is a new way to realize the industrialization of QDs used for future devices.

Study of GeSi Alloy Deposition on Ge Substrate by Very Low-Pressure Chemical Vapor Deposition

Growth Kinetics Study of Sige Alloys Deposited by Rapid Thermal Process, Very Low Pressure Chemical Vapor Deposition

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

Simulation Model to Very Low Pressure Chemical Vapor Deposition of SiGe Alloy

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Stress Property Of Sige Alloy Deposited By Very Low Pressure Chemical Vapor Deposition

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Chemical Vapor Deposition of Ge on GaN/Al2O3(0001) Substrates

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Structural Study Of Chemical Vapor Deposition Of Si On Gan

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Study on the High Speed Chemical Vapor Deposition for SiC Coating

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Study of Ge Epitaxial Growth on Si Substrates by Cluster Beam Deposition