Abstract:The thermophysical properties and atomic structure of liquid Si-Ge alloys were investigated by the molecular dynamic simulations with Stillinger-Weber potential over a broad temperature range, including both superheating and undercooled regime. The maximum undercooling in this work is 611 K for pure Ge. For all the Si100-xGex(x = 0, 10, 20, 30, 40, 50, 60, 70, 80, 90, 100) alloys, the densities exhibit quadratic relationship with temperature. The density of Si at the melting temperature is 2.59 g.cm(-3), existing a slight deviation of 0.39% compared with the experiential data. For liquid Ge, the density at the melting temperature is 5.62 g.cm(-3), nearly identical with the reported values. In all the cases, the densities of Si-Ge alloys with different compositions are larger than those of ideal solution. Therefore, liquid Si-Ge alloys display negative excess volume, which reaches the minimum at 40% Ge content. The specific heat was obtained by thermodynamic function and energy fluctuation approaches, respectively. Both of the results are in good agreement with experimental data around the liquidus temperatures. Furthermore, the diffusion coefficients were obtained by calculating the mean square displacement. The pair distribution function was applied to analyze the liquid structure. It is found that the peaks occur around the liquidus temperatures, which implies the structure change between normal and undercooled liquid alloys.

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Raman spectra study of strained SiGe alloys

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Study of GeSi Alloy Deposition on Ge Substrate by Very Low-Pressure Chemical Vapor Deposition

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Ge Thin Films on Si Substrate and Thermal Annealing Effect on Their Properties

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

Compressive and Tensile Strain Effects on Atomic Distribution in Strained Si-Ge Alloys

Thermophysical Properties and Atomic Structure of Liquid Si-Ge Alloys

Raman-Study Of Strained Sige Layers

Stress Property Of Sige Alloy Deposited By Very Low Pressure Chemical Vapor Deposition

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Recent Advances in Research and Development on Preparation and Properties of SiGeC Alloys

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

The Study of Temperature Dependent Strain in Ge Epilayer with SiGe/Ge Buffer Layer on Si Substrate with Different Thickness

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate