Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Defects and Strain in Ge x Si 1−x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

The growth and quality evaluation of strained Si material with multilayer structure

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Study of Si and Ge growth on Si(100) surface

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Point Defects in Relaxed Si1-xGex Alloy Layers

Strain Relaxation and Defect Formation in Heteroepitaxial Si1−xGex Films Via Surface Roughening Induced by Controlled Annealing Experiments

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures