Abstract:Si1 − yCy alloys have been grown on Si(001) by Si molecular beam epitaxy (MBE) under a low pressure of C2H4 at 600°C. In spite of relatively high carbon concentrations, estimated by X-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS), a good epitaxial relationship with the substrate is obtained as proved by cross-sectional transmission electron diffraction observations (XTED), reconstructed 2 × 1 low-energy electron diffraction (LEED) diagrams and Si 2p X-ray photoelectron diffraction (XPD) modulated polar patterns for the alloys with the cubic symmetry of the Si substrate. Nevertheless the simultaneous absences of relevant C 1s XPD features, significant strain induced X-ray diffraction (XRD) shifts and clear C-related local infrared (IR) or Raman modes, give rise to the question of the incorporation mode of C, different here from the often invoked substitutional mode in other Si1 − yCy alloys. Inspection by cross-sectional transmission electron microscopy (XTEM) of these samples with the lowest C-content shows regularly spaced contrast variations (striations), roughly parallel to the Sialloy interface with a periodicity of about 9 nm. High resolution micrographs reveal between the contrasted strips a nearly perfect and unstrained Si lattice, free of dislocations or SiC nanocrystal inclusions. With increasing C-concentrations, extended defects such as twins or stacking faults appear in the layer, generating roughness at the surface and the striations finally disappear. The striations may tentatively be accounted for pseudomorphic growth of new C-rich phases, theoretically suggested by Rücker et al. [H. Rücker, M. Methfessel, E. Bugiel and H.J. Osten, Phys. Rev. Lett. 72 (1994) 3578], matching the C-induced strain and allowing subsequent strain free Si-growth.

Analysis of the Growth and Properties of 4H-Si_(1-y)C_y Alloy

The growth of Si1-yCy alloy on 6H-SiC homoepitaxial layers

A Particular Epitaxial Si1 − Ycy Alloy Growth Mode on Si(001) Evidenced by Cross-Sectional Transmission Electron Microscopy

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Synthesis of Epitaxial Si1 − Ycy Alloys on Si(001) with High Level of Non-Usual Substitutional Carbon Incorporation

Growth and Characterization of High Quality Si1-X-Ygexcy Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

Study of Strain in Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum／Chemical Vapor Depostion

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Influence of Growth Conditions on the Incorporation of Substitutional C in Si1-x-yGexCy Alloy on Si by Chemical Vapor Deposition Using C2H4

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition

Variance of Substitutional C Fraction in Si_(1-y)C_y alloy Films with the Growth Temperature

Surface morphology study and electrical properties of Si1 - xCx on Si grown by low pressure chemical vapor deposition

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films