Abstract:Si1 − yCy alloys have been grown on Si(001) by Si molecular beam epitaxy (MBE) under a low pressure of C2H4 at 600°C. In spite of relatively high carbon concentrations, estimated by X-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS), a good epitaxial relationship with the substrate is obtained as proved by cross-sectional transmission electron diffraction observations (XTED), reconstructed 2 × 1 low-energy electron diffraction (LEED) diagrams and Si 2p X-ray photoelectron diffraction (XPD) modulated polar patterns for the alloys with the cubic symmetry of the Si substrate. Nevertheless the simultaneous absences of relevant C 1s XPD features, significant strain induced X-ray diffraction (XRD) shifts and clear C-related local infrared (IR) or Raman modes, give rise to the question of the incorporation mode of C, different here from the often invoked substitutional mode in other Si1 − yCy alloys. Inspection by cross-sectional transmission electron microscopy (XTEM) of these samples with the lowest C-content shows regularly spaced contrast variations (striations), roughly parallel to the Sialloy interface with a periodicity of about 9 nm. High resolution micrographs reveal between the contrasted strips a nearly perfect and unstrained Si lattice, free of dislocations or SiC nanocrystal inclusions. With increasing C-concentrations, extended defects such as twins or stacking faults appear in the layer, generating roughness at the surface and the striations finally disappear. The striations may tentatively be accounted for pseudomorphic growth of new C-rich phases, theoretically suggested by Rücker et al. [H. Rücker, M. Methfessel, E. Bugiel and H.J. Osten, Phys. Rev. Lett. 72 (1994) 3578], matching the C-induced strain and allowing subsequent strain free Si-growth.

Variance of Substitutional C Fraction in Si_(1-y)C_y alloy Films with the Growth Temperature

Influence of Growth Conditions on the Incorporation of Substitutional C in Si1-x-yGexCy Alloy on Si by Chemical Vapor Deposition Using C2H4

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition

Synthesis of Epitaxial Si1 − Ycy Alloys on Si(001) with High Level of Non-Usual Substitutional Carbon Incorporation

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Analysis of the Growth and Properties of 4H-Si_(1-y)C_y Alloy

The growth of Si1-yCy alloy on 6H-SiC homoepitaxial layers

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Growth and Characterization of High Quality Si1-X-Ygexcy Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Study of Strain in Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum／Chemical Vapor Depostion

A Particular Epitaxial Si1 − Ycy Alloy Growth Mode on Si(001) Evidenced by Cross-Sectional Transmission Electron Microscopy

The Growth of Si on Sic Complex Substrate by Cvd

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Effcet of Annealing on Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum Chemical Vapor Deposition