Abstract:Si1−xGex thin films on the Ar+ ion-implanted Si substrates with different implantation energy (30keV, 40keV and 60keV) at the same implantation fluence (3×1015cm−2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to characterize these Si1−xGex films. Investigations by Rutherford backscattering spectroscopy/channeling (RBS/C) demonstrate that thin Si0.81Ge0.19 films could be epitaxially grown on the ion-implanted Si substrates, although there existed obvious crystal defects. These relaxation extents of Si0.81Ge0.19 films on the Ar+ implanted Si substrates are larger than that in the un-implanted case, which were determined by Raman spectra. Atomic force microscopy was used to determine the surface morphology of Si0.81Ge0.19 films. The microstructures of these SiGe/Si hetero-epitaxial materials were investigated by transmission electron microscopy (TEM). All the experimental results demonstrated that a highly relaxed (relaxation extent of 82.3%) Si0.81Ge0.19 thin film (50nm) growing on the 30keV Ar+ ion-implanted Si substrate is optimal, which is compared to those SiGe films grown on the ion-implanted Si substrate under other implantation condition.

Effect of Strain Relief on the Si_(1-x-y) Ge_xC_y Alloys Grown by Ultra\|High Vacuum/Chemical Vapor Deposition\+*

Study of Strain in Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum／Chemical Vapor Depostion

The growth of Si1− x − y Ge x C y alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Effcet of Annealing on Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum Chemical Vapor Deposition

Growth and Characterization of High Quality Si1-X-Ygexcy Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Recent Advances in Research and Development on Preparation and Properties of SiGeC Alloys

Growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Influence of Growth Conditions on the Incorporation of Substitutional C in Si1-x-yGexCy Alloy on Si by Chemical Vapor Deposition Using C2H4

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Influence of C on Ge Incorporation in the Growth of Ge-rich Ge1−x−ySixCy Alloys on Si (100)

Strain and Electrical Characterization of Boron-Doped Sigec Layers Grown by Chemical Vapor Deposition

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Growth of Si1-x-yGexCy ternary alloy on Si by chemical vapor deposition

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys