Abstract:Over the last decade SiGe has been proposed as a structural material for low thermal budget microelectromechanical systems (MEMS) that can be post-processed on top of standard CMOS driving and controlling electronics [1-6]. There are several ways to decrease the deposition temperature of SiGe and at the same time preserve the desired physical properties for MEMS as low electrical resistivity, high quality factor, economical growth rate and low mean stress and strain gradient. The conventional approach to reduce the crystallization thermal budget is to increase the germanium content to 60%, or more, using conventional Low Pressure Chemical Vapor Deposition (LPCVD) [1-3]. In this case highly conductive polycrystalline films can be realized, but the strain gradient is relatively high. This can be eliminated by furnace annealing at 450°C [2], which might introduce damage to the underlying circuits such as in the case of Cu/low k CMOS. This problem can be alleviated using excimer pulsed laser annealing [7, 8], which has been attractive for low thermal budget applications such as thin film transistors (TFT) [9], solar cells fabricated on glass substrates [10] and for monolithic integration of MEMS devices on top of standard driving electronics using SiGe as an active material [8, 11]. Also the use of hydrogenated microcrystalline SiGe allows for a low thermal budget [12]. In addition, metal induced crystallization has recently been proposed to enhance the crystallization of silicon at temperatures as low as 500°C, and the realized devices had outstanding performance compared to those employing conventional solid-phase crystallization [13]. This technique enhances crystallization by two methods. First, it has been observed that depositing SiGe on top of a thin Al or Ni layer, has a polycrystalline micro-structure close to the metal/ SiGe interface [11]. Annealing this film for a long period (is determined by the annealing temperature), results in metal diffusion and a subsequent crystallization of the film. Finally, when the metal is diffused completely through out the film, it can be etched away. The main disadvantage of this approach is that the mean stress is highly compressive and this might affect the functionality of surface micromachined structures [13].

Self-Nucleation Free and Dimension Dependent Metal-Induced Lateral Crystallization of Amorphous Germanium for Single Crystalline Germanium Growth on Insulating Substrate

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Formation of Nanotwin Networks during High-Temperature Crystallization of Amorphous Germanium

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Metal Induced Crystallization of SiGe at 370°C for Monolithically Integrated MEMS Applications

Low temperature boron and phosphorus activation in amorphous germanium using Ni- and Co-induced crystallization and its application for three-dimensional integrated circuits

Ni Induced Crystallization of Amorphous SiGe

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam

Self‐Limiting Synthesis of Ultrathin Ge(110) Single Crystal via Liquid Metal

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices