Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

Low temperature boron and phosphorus activation in amorphous germanium using Ni- and Co-induced crystallization and its application for three-dimensional integrated circuits

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Dopant Activation in Poly-SI/sub1-x/Ge/subx/ at Low Temperature

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process

Self-Nucleation Free and Dimension Dependent Metal-Induced Lateral Crystallization of Amorphous Germanium for Single Crystalline Germanium Growth on Insulating Substrate

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si 1-x Ge x by ion implantation and subsequent nanosecond laser annealing

The Effects of Carbon on Phosphorus Diffusion and Activation in Ge

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing

Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n$^{+}$/p Junctions

Germanium doping for improved silicon substrates and devices

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing