Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

The Effects of Carbon on Phosphorus Diffusion and Activation in Ge

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process

n‐LDD Ultra‐Shallow Extension Formation Using Cold and Carbon Ion Implantation

Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping

Dopant Activation in Poly-SI/sub1-x/Ge/subx/ at Low Temperature

Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

Low temperature boron and phosphorus activation in amorphous germanium using Ni- and Co-induced crystallization and its application for three-dimensional integrated circuits

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

N+/P Shallow Junction with High Dopant Activation and Low Contact Resistivity Fabricated by Solid Phase Epitaxy Method for Ge Technology

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n$^{+}$/p Junctions

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

EFFECT OF VARIABLE TEMPERATURE PHOSPHOROUS GETTERING TREATMENTS ON THE PERFORMANCE OF MULTICRYSTALLINE SILICON