Abstract:Given that transistor dimensions are approaching atomic scale in metal–oxide–semiconductor field-effect-transistors (MOSFETs), attaining low-contact resistivity ( ρc ) between contact-metal and Si is a primary challenge for source/drain (S/D) fabrications. To reduce ρc , it is necessary to increase active dopant concentration in the semiconductor region underneath the contact-metal. High-dose ion-implantation and nanosecond laser-annealing (NLA) have been intensively investigated to produce highly activated layers in S/D regions. Particularly for the B-doped SiGe layers, which are used as S/D stressor for p-MOSFETs, non-substitutional B species are generated in the highly doped films at concentrations exceeding ∼ 10 21 cm −3 . These non-substitutional B are electrically non-activated and thus should be minimized to reduce ρc . In this study, we investigated the chemical states and electrical activation in highly B-doped SiGe layer. Using X-ray photoelectron spectroscopy (XPS), we examined the substitutionality of B-atoms and identified new chemical states of Si-B and Ge-B bonds in Si 2 p and Ge 3 d peaks. In the B 1 s spectra, electrical activation states are determined by quantifying relative area ratios of the active/inactive B peaks, which are well matched with activation rates calculated by Hall measurements. Our findings systematically explained the activation behavior of NLA-treated B-doped SiGe films in high B-concentration ranges.

Low temperature boron and phosphorus activation in amorphous germanium using Ni- and Co-induced crystallization and its application for three-dimensional integrated circuits

Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Dopant Activation in Poly-SI/sub1-x/Ge/subx/ at Low Temperature

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Self-Nucleation Free and Dimension Dependent Metal-Induced Lateral Crystallization of Amorphous Germanium for Single Crystalline Germanium Growth on Insulating Substrate

Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Nonthermal Plasma Synthesized Boron-Doped Germanium Nanocrystals

The Effects of Carbon on Phosphorus Diffusion and Activation in Ge

Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Formation of Thin Germanium Dioxide Film with A High-Quality Interface Using A Direct Neutral Beam Oxidation Process

Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si 1-x Ge x by ion implantation and subsequent nanosecond laser annealing

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Characteristics of metal-induced crystallization/dopant activation and its application to junction diodes on single-crystalline silicon

Thermal activation of low-density Ga implanted in Ge

Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n$^{+}$/p Junctions