Abstract:Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

Characteristics of metal-induced crystallization/dopant activation and its application to junction diodes on single-crystalline silicon

Characterization of the MIC/MILC Interface and Its Effects on the Performance of MILC Thin-Film Transistors

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Thermal Stability Enhancement of NiGe Metal Source/Drain and Ge Pmosfets by Dopant Segregation

Characterizations on the Doping of Single-Crystal Silicon Carbide

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Microwave Effects on Metal–Semiconductor Contact of Heavily Nitrogen-Implanted Silicon

Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films

Doping effect on the metal-induced lateral crystallization rate

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Effect of Si Nanoparticles on Electronic Transport Mechanisms in P-doped Silicon-Rich Silicon Nitride/c-Si Heterojunction Devices

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

Plasma-Doped Si Nanosheets for Transistor and p-n Junction Application

Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration

Resonant Tunneling Characteristics in Crystalline Silicon/Nanocrystalline Silicon Heterostructure Diodes

Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate