Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Mechanism of Metal Induced Lateral Crystallization

Characterization of the MIC/MILC Interface and Its Effects on the Performance of MILC Thin-Film Transistors

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Doping effect on the metal-induced lateral crystallization rate

MILC Thin Film Transistor with Ultra-Thin Channel

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Characteristics of metal-induced crystallization/dopant activation and its application to junction diodes on single-crystalline silicon

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Optimization of Material Structure of Ploy-Si Thin Film Based on Al Induced Crystallization

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Metal-insulator transition in films of doped semiconductor nanocrystals