Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

MILC Thin Film Transistor with Ultra-Thin Channel

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

Comparison Study of Metal Induced Lateral Crystallized and Solid-Phase Crystallized Polycrystalline Silicon Thin Film Transistors with Different Channel Thickness

Characterization of the MIC/MILC Interface and Its Effects on the Performance of MILC Thin-Film Transistors

Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFTs

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Ultrathin Multibridge Channel Transistor Enabled by Van Der Waals Assembly.

Impacts of Vertically Stacked Monolithic 3D-IC Process on Characteristics of Underlying Thin-Film Transistor

Channel thickness effect on the performance of amorphous SiZnSnO semiconductor thin-film transistor with metal capping structure

One-Time-Programmable Memory in LTPS TFT Technology with Metal-Induced Lateral Crystallization

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

Micron Channel Length ZnO Thin Film Transistors Using Bilayer Electrodes

Deep-Submicrometer Complementary Metal-Oxide-Semiconductor Transistors Based on Carbon Nanotube Films

A Novel Strained Si Channel Heterojunction pMOSFET

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Effects of crystallinity of silicon channels formed by two metal-induced lateral crystallization methods on the cell current distribution in NAND-type 3D flash memory

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Low-temperature and low thermal budget fabrication of polycrystalline silicon thin-film transistors

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method

High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2Nm/0.6nm