Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

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Ultrathin Multibridge Channel Transistor Enabled by Van Der Waals Assembly.

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric

MILC Thin Film Transistor with Ultra-Thin Channel

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

High‐Density Vertical Transistors with Pitch Size Down to 20 nm

Vertical N-Type and P-Type Nanosheet FETs with C-Shaped Channel

Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit

III–V Multiple-Gate Field-Effect Transistors with High-Mobility $\hbox{in}_{0.7}\hbox{ga}_{0.3}\hbox{as}$ Channel and Epi-Controlled Retrograde-Doped Fin

High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with Maximum G<inf>m</inf> Exceeding 1.1 Ms/&#x00b5;m: New HBr Pretreatment and Channel Engineering

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET with Maximum Drain Current Exceeding 1 A/mm

Top-Gate CVD WSe2 pFETs with Record-High I-d similar to 594 mu A/mu m, G(m)similar to 244 mu S/mu m and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration

Top-Gate CVD WSe2 Pfets with Record-High Id~594 Μa/μm, Gm~244 Μs/μm and WSe2/MoS2 CFET Based Half-adder Circuit Using Monolithic 3D Integration

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts