Abstract:In recent years, technology has embraced the use of Junctionless Double Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors (JL DGMOSFET) to reduce Short Channel Effects (SCEs). This research presents a novel JL DGMOSFET based on a highly doped N‐type SiGe in which an III‐V compound material is used at source regime. The III‐V compound material GaSb with higher mobility and higher injection velocity is used as source material, whereas SiGe is considered for both channel and drain materials to produce a higher output current and low leakage current for the N channel JL DGMOSFET. In addition, high‐k dielectric material HfO2 is employed to improve the controllability of the gate at 20 nm channel length. Different parameters, such as Id, SS, gm, TGF, Ion/Ioff ratio, Cgs, and fT of a Symmetric JL DGMOSFET are studied and compared to existing works. The comparison shows that the proposed JL DGMOSFET outperforms the existing state of knowledge. The analysis is also being extended by including the trap charge for the symmetric JL DGMOSFET. Parametrically, the asymmetrical structure is finally studied. The proposed structure yields a higher Id of 40 mA, SS of 60.25 mV/decade, gm of 0.148 A/V, TGF of 3.69 V‐1, Ion/Ioff ratio of 3.41 × 1013, Cgs of 3.78 × 10−16 F and fT of 1.19 × 1013 Hz, hence indicating an improved RF and DC analysis.

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