Abstract:High-performance inversion-type enhancement-mode (E-mode) n-channel MOSFETs on In-rich InGaAs using ALD Al2O3 as high-k gate dielectrics are demonstrated. The maximum drain current, peak transconductance, and the effective electron velocity of 1.0 A/mm, 0.43 S/mm and 1.0x10(7) cm/s at drain voltage of 2.0 V are achieved at 0.75-mu m gate length devices. The device performance of In-rich InGaAs NMOSFETs with different indium contents, In0.53Ga0.47As, In0.65Ga0.35As and In0.75Ga0.25As, are systematically studied and compared. Deep submicron inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric are also demonstrated by the full electron beam lithography process. N-channel MOSFETs with 100 nm to 200 nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices exhibit drain currents of 260 mu A/mu m to 801 mu A/mu m and transconductances of 540 mu S/mu m to 950 mu S/mu m. Important scaling metrics, such as on/off current ratio, sub-threshold swing, and drain-induced barrier lowering are presented and their relations to the short-channel effect are discussed. Although on-state performance of InGaAs MOSFETs, such as drain current and trans-conductance, shows great opportunities for III-V MOSFET for future logic applications, great challenges could still exist on off-state performance limited by the implanted junction leakage and donar-type interface traps at high-k/InGaAs interfaces.

High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET with Maximum Drain Current Exceeding 1 A/mm

High Performance Submicron Inversion-Type Enhancement-Mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO As Gate Dielectrics

Inversion-mode InxGa1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer-deposited high-k dielectrics

High-performance Inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as Gate Dielectric

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited <formula formulatype="inline"><tex>$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> as Gate Dielectric

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High-performance surface channel In-rich In 0.75 Ga 0.25 As MOSFETs with ALD high-k as gate dielectric

High-Performance Surface Channel In-Rich In0.75ga0.25as Mosfets With Ald High-K As Gate Dielectric

Subthreshold Characteristics of High-performance Inversion-type Enhancement-mode InGaAs NMOSFETs with ALD A1 2 O 3 as Gate Dielectric

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75ga0.25as Mosfet

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode $\hbox{in}_{0.75}\hbox{ga}_{0.25}\hbox{as}$ MOSFET

Inversion-Type Enhancement-Mode InP Mosfets with ALD High-K Al2O3 and HFO2 as Gate Dielectrics

20&Amp;#x2013;80nm Channel Length InGaAs Gate-All-around Nanowire MOSFETs with EOT&#x003D;1.2nm and Lowest SS&#x003D;63mV/dec

Inversion-type Enhancement-Mode InP MOSFETs with ALD Al2O3, HfO2 and HfAlO Nanolaminates As High-K Gate Dielectrics

Enhancement-Mode Inp N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Al2o3 Dielectrics

GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial $\hbox{la}_{1.8}\hbox{y}_{0.2}\hbox{o}_{3}$ As Dielectric

Design and Investigation of InGaAs/InP/InAlAs MOSFET With Optimized Switching Efficiency