Abstract:High-performance inversion-type enhancement-mode (E-mode) n-channel MOSFETs on In-rich InGaAs using ALD Al2O3 as high-k gate dielectrics are demonstrated. The maximum drain current, peak transconductance, and the effective electron velocity of 1.0 A/mm, 0.43 S/mm and 1.0x10(7) cm/s at drain voltage of 2.0 V are achieved at 0.75-mu m gate length devices. The device performance of In-rich InGaAs NMOSFETs with different indium contents, In0.53Ga0.47As, In0.65Ga0.35As and In0.75Ga0.25As, are systematically studied and compared. Deep submicron inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric are also demonstrated by the full electron beam lithography process. N-channel MOSFETs with 100 nm to 200 nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices exhibit drain currents of 260 mu A/mu m to 801 mu A/mu m and transconductances of 540 mu S/mu m to 950 mu S/mu m. Important scaling metrics, such as on/off current ratio, sub-threshold swing, and drain-induced barrier lowering are presented and their relations to the short-channel effect are discussed. Although on-state performance of InGaAs MOSFETs, such as drain current and trans-conductance, shows great opportunities for III-V MOSFET for future logic applications, great challenges could still exist on off-state performance limited by the implanted junction leakage and donar-type interface traps at high-k/InGaAs interfaces.

Asymmetric Ingaas/Inp Mosfets With Source/Drain Engineering

Asymmetric Ingaas Mosfets With Ingaas Source And Inp Drain

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

In Gaas Mosfets With Inp Drain

InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

High performance of junctionless MOSFET with asymmetric gate

High-performance Inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as Gate Dielectric

Regrown Source/Drain Based Ingaas Mosfet with Si3n4 Nitride Spacer

Inversion-mode InxGa1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer-deposited high-k dielectrics

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

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Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited <formula formulatype="inline"><tex>$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> as Gate Dielectric

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High-frequency InA1N/GaN HFET with an f(T) of 350 GHz

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Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.

Subthreshold Characteristics of High-performance Inversion-type Enhancement-mode InGaAs NMOSFETs with ALD A1 2 O 3 as Gate Dielectric

Scaling of Ingaas Mosfets into Deep-Submicron

Vertical InAs Nanowire MOSFETs with ID<inf>S</inf> = 1.34 Ma/&#x00b5;m and G<inf>m</inf> = 1.19 Ms/&#x00b5;m at VD<inf>S</inf> = 0.5 V