Abstract:The principal obstacle to III-V compound semiconductors rivaling or exceeding the properties of Si electronics has been the lack of high-quality, thermodynamically stable insulators on GaAs (or on III-V materials in general). For more than four decades, the research community has searched for suitable III-V compound semiconductor gate dielectrics or passivation layers. The literature testifies to the extent of this effort, with representative, currently active approaches including sulfur passivation , silicon interface control layers (Si ICLs) , in situ molecular beam epitaxy (MBE) growth of Ga2O3(Gd2O3) , ex situ atomic layer deposition (ALD) growth of Al2O3 and HfO2 , wet oxidation of InAlP , jet vapor deposition (JVD) 12 of Si3N4, and ALD or PVD of HfO2 + Si ICL . The research on ALD high-k dielectric is of particular interest, since the Si industry is getting familiar with ALD Hfbased dielectrics and this approach has the potential to become a manufacturable technology. In the past years, we systematically studied the interface properties of ALD high-k dielectrics on GaAs, InGaAs with different In concentrations, InAs, InSb, InP, GaN and GaP using quasi-static CV, low-frequency high-frequency CV, conductance-method, charge pumping, and flatband shift vs. metal workfunction etc. approaches. The results show the Fermi-level in GaAs is not absolutely pinned at the mid-gap as Spicer model proposes. It can move almost across the whole bandgap with ~70% modulation efficiency. However, due to the wide bandgap of GaAs, existing interface traps and low density of states in GaAs, only weak inversion could be realized at ALD Al2O3/GaAs interface. This fact explains the observed inversion feature in quasi-static CV measurement at room temperature and in dark. It also explains why only low drain currents are obtained in inversion GaAs NMOSFETs and PMOSFETs using ALD Al2O3 as high-k dielectrics. Fermi-level in In-rich InGaAs is totally unpinned and strong inversion is realized as well as large drain current in inversion NMOSFETs. We also review detailed C-V and conductance-method measurements on high temperature annealed ALD Al2O3 dielectrics on GaAs and InGaAs and I-V characterization on fabricated enhancement-mode (E-mode) GaAs and InGaAs MOSFETs where the inversion channels are directly formed at the Al2O3/GaAs and Al2O3/InGaAs interfaces.

InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

In Gaas Mosfets With Inp Drain

Asymmetric Ingaas/Inp Mosfets With Source/Drain Engineering

Asymmetric Ingaas Mosfets With Ingaas Source And Inp Drain

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Reduction Of Off-State Drain Leakage In Ingaas-Based Metal-Oxide-Semiconductor Field-Effect Transistors

&Amp;#x201c;zero&#x201d; Drain-Current Drift of Inversion-Mode NMOSFET on InP (111)A Surface

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

High-performance Inversion-mode High-k/InGaAs MOSFETs and Their Interface Studies - Invited

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Electrothermal analysis of novel N-P-P FinFET with electrically doped drain: a dual material gate device for reliable nanoscale applications

Inversion-mode InxGa1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer-deposited high-k dielectrics

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design