Scaling of Ingaas Mosfets into Deep-Submicron

Y. Q. Wu,J. J. Gu,P. D. Ye

DOI: https://doi.org/10.1149/1.3367950

2010-01-01

ECS Transactions

Abstract:We have demonstrated high-performance deep-submicron inversion-mode InGaAs MOSFETs with gate lengths down to 150 nm with record Gm exceeding 1.1 mS/µm. Oxide thickness scaling is performed to improve the on-state/off-state performance and Gm is further improved to 1.3 mS/µm. HBr pre-cleaning, retro-grade structure and halo-implantation processes are first time introduced into III-V MOSFETs to steadily improve high-k/InGaAs interface quality and on-state/off-state performance of the devices. We have also demonstrated the first well-behaved inversion-mode InGaAs FinFET with ALD Al2O3 as gate dielectric using novel damage-free etching techniques. Detailed analysis of SS, DIBL and VT roll-off are carried out on FinFETs with Lch down to 100 nm and WFin down to 40 nm. The short-channel effect (SCE) of planar InGaAs MOSFETs is greatly improved by the 3D structure design. The result confirms that the newly developed dry/wet etching process produces damage-free InGaAs sidewalls and the high-k/3D InGaAs interface is comparable to the 2D case.