Abstract:This work reports on a surprising and abnormal increase of the Raman intensity when the probing area is moved to the edge of a mechanically cleaved Si wafer. Our detailed surface structure study based on atomic force microscope and scanning electron microscope rules out any effect from surface morphology. Systematic study of the Raman system focusing effect with a range of mu m finds no focusing effect involved in our observed phenomenon. The linewidth, wavenumber, and intensity of the 521cm(-1) peak are obtained and evaluated quantitatively when the testing region is moved from the center to the cleaved edge. When the grain size of crystalline silicon varies from 20 to 10nm, the Raman intensity of the 521cm(-1) peak is increasing abnormally, by about 100%. Meanwhile, both the linewidth and wavenumber change by about 2cm(-1) and 4cm(-1), respectively. If instrument and surface factors are well controlled/defined, the change of Raman intensity could provide a sensitive and complementary method for grain size characterization in addition to the Raman wavenumber and linewidth methods. Copyright (c) 2013 John Wiley & Sons, Ltd.

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films

Low-Frequency Raman Scattering of Ge and Si Nanocrystals in Silica Matrix

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Polarized Raman Scattering of Ge Nanocrystals Embedded in A-Sio2

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Raman scattering and room-temperature visible photoluminescence from Ge nanocrystals embedded in SiO2 thin films

The Observation of the Low-Frequency Acoustic Phonon Torsional Modes in Nanocrystalline Silicon

Formation Mechanism of Ge Nanocrystals Embedded in SiO2studied by Fluorescence X-Ray Absorption Fine Structure

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals

Vibrational Properties of Near-Surface Regions of Silicon Nanocrystallites

Estimation of crystal-size of nc-Ge by Raman scattering spectra

Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy

Sub-Micron Imaging Of Sub-Surface Nanocrystalline Structure In Silicon

Low-Frequency Raman Scattering from Nanocrystals Caused by Coherent Excitation of Phonons

Growth of Embedded Ge Nanocrystals on Different Substrates