Abstract:Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (Eg ∼1.6 eV, E1 ∼2.1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reverse-saturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the "ON" and "OFF" states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm−2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

Polarized Raman Scattering of Ge Nanocrystals Embedded in A-Sio2

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Low-Frequency Raman Scattering of Ge and Si Nanocrystals in Silica Matrix

Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO_2 films

Local Vibration at the Surface of a Ge Nanocrystal Embedded in a Silicon Oxide Matrix

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Influence of GeSi Interfacial Layer on Ge–Ge Optical Phonon Mode in SiO2 Films Embedded with Ge Nanocrystals

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

Annealing Temperature Dependence of Raman Scattering in Ge+-implanted SiO2 Films

Abnormal vibrational anisotropy and thermal property of two-dimensional GeAs semiconductor

Optical Phonons in Self-Assembled Ge Quantum Dot Superlattices: Strain Relaxation Effects

Brillouin Study of Acoustic Phonon Confinement in Geo2 Nanocubes

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Electronic states and phonon properties of Ge x Si 1−x nanostructures

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

Raman Scattering Of Ge/Si Dot Superlattices Under Hydrostatic Pressure

Low-Frequency Raman Scattering from Nanocrystals Caused by Coherent Excitation of Phonons