Abstract:Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using a silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 degrees C. The structural and optical properties of the deposited films are systematically investigated by Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/vis spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy. It is shown that the structure of the silicon thin films evolves from the purely amorphous phase to the nanocrystalline phase when the substrate temperature is increased from 100 to 150 degrees C. It is found that the variations of the crystalline fraction f(c), bonded hydrogen content C(H), optical bandgap E(Tauc), film microstructure and growth rate R(d) are closely related to the substrate temperature. In particular, at a substrate temperature of 300 degrees C, the nanocrystalline Si thin films of our interest feature a high growth rate of 1.63 nm s(-1), a low hydrogen content of 4.0 at.%, a high crystalline fraction of 69.1%, a low optical bandgap of 1.55 eV and an almost vertically aligned columnar structure with a mean grain size of approximately 10 nm. It is also shown that the low-temperature synthesis of nanocrystalline Si thin films without any hydrogen dilution is attributed to the outstanding dissociation ability of the high-density inductively coupled plasmas and effective plasma-surface interactions during the growth process. Our results offer a highly effective yet simple and environmentally friendly technique to synthesize high-quality nanocrystalline Si films, vitally needed for the development of new-generation solar cells and other emerging nanotechnologies.

A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

High-Throughput Low Frequency Reactor for Non-Thermal Plasma Synthesis of Amorphous Silicon Nanoparticles

Numerical Study of Si Nanoparticle Formation by SiCl4hydrogenation in RF Plasma

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

An efficient and closed-loop approach to convert silicon tetrachloride to silicon nanospheres anode materials via hydrogen thermal plasma

Silicon nanocrystals synthesized using very high frequency non-thermal plasma and their application in photovoltaics

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

Polysilicon prepared from SiCl4 by atmospheric-pressure non-thermal plasma

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

Polysilicon Prepared from SiCl4by Atmospheric-Pressure Non-Thermal Plasma

Facile Synthesis of Silicon Nanospheres and Nanosheets Using DC Thermal Plasma

Plasma synthesis of single crystal silicon nanoparticles for novel electronic device applications

Rapid, Low-Temperature Synthesis of Nc-Si in High-Density, Non-Equilibrium Plasmas: Enabling Nanocrystallinity at Very Low Hydrogen Dilution

Structural Evolution of Nanocrystalline Silicon Thin Films Synthesized in High-Density, Low-Temperature Reactive Plasmas

Silicon nitride powder synthesized by thermal plasma method

Plasma Synthesis of Silicon Nanocrystals: Application to Organic/Inorganic Photovoltaics Through Solution Processing

Effective Control of Nanostructured Phases in Rapid, Room-Temperature Synthesis of Nanocrystalline Si in High-Density Plasmas

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Investigation on the initial growth of nanocrystalline silicon prepared from hydrogen-diluted SiCl<sub>4</sub> at low temperatures

Synthesis of Ultrafine Silicon Carbide Nanoparticles Using Nonthermal Arc Plasma at Atmospheric Pressure