Numerical Study of Si Nanoparticle Formation by SiCl4hydrogenation in RF Plasma

Christophe Rehmet,Tengfei Cao,Yi Cheng
DOI: https://doi.org/10.1088/0963-0252/25/2/025011
2016-01-01
Plasma Sources Science and Technology
Abstract:Nanocrystalline silicon (nc-Si) is a promising material for many applications related to electronics and optoelectronics. This work performs numerical simulations in order to understand a new process with high deposition rate production of nc-Si in a radio-frequency plasma reactor. Inductive plasma formation, reaction kinetics and nanoparticle formation have been considered in a sophisticated model. Results show that the plasma parameters could be adjusted in order to improve selectivity between nanoparticle and molecule formation and, thus, the deposition rate. Also, a parametric study helps to optimize the system with appropriate operating conditions.
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