Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Field Emission Properties of Nanocomposite Carbon Nitride Films

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Deposition of Silicon Carbon Nitride Film on Si (100) Substrates

Silicon Carbon Nitride Cones Prepared from an Ellipsoid Microwave Plasma Chemical Vapor Deposition Reactor

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Formation of Silicon Carbon Nitride Crystals and Aligned Silicon Carbon Nitride Microrods by Microwave Plasma Chemical Vapor Deposition

Optical & Electronic Properties of Carbon Nitride Thin Films

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Processing and Characterisation of PECVD Silicon Nitride Films

Field emission properties of nano-composite carbon nitride films

Crystalline Carbon Nitride Films Prepared by Microwave Plasma Chemical Vapour Deposition

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method

Synthesis and Field Emission Property of SiCN Cone Arrays

Study of Field Electron Emission from Nanocrystalline Diamond Thin Films Grown from A N-2/Ch4 Microwave Plasma

Structural Nature of Nanocrystalline Silicon