Abstract:Silicon carbonitride thin films were synthesized on single-crystal Si(100) substrates by reactive rf sputtering a SiC target in nitrogen and argon mixture gas (1:4) and a Si3N4 target in methane and argon mixture gas (1:5 and 1:8), respectively. The effect of target voltage on chemical composition and bonding configuration of thin films were studied. Auger electron spectra confirmed the presence of Si, C, N, and O elements in the deposited films. With the assumption that the absorption coefficient of each band was constant within the range of the film composition in question, Fourier-transform infrared spectra measurement showed qualitatively the dependence of the bonding configuration on the plasma energy. X-ray photoelectron spectroscopy analysis showed the formation of a complex network among Si, C, and N elements with more complicated atomic chemical environments than that in a mixture of pure phases, a clear correlation of binding energy and intensity of fitted features of Si 2p, C 1s, N 1s, and O 1s peaks on the target voltage. Spectra analysis reflected that the incorporation of carbon into silicon nitride and the tetrahedral carbon species (sp3 including C–C and C–N species) was enhanced by increasing the target voltage. The results demonstrated that the bonding configuration and chemical composition could be tailored by adjusting the plasma energy.

Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Spectra Characterization of Silicon Carbonitride Thin Films by Reactive Radio Frequency Sputtering

Deposition of Silicon Carbon Nitride Film on Si (100) Substrates

Structures and bonding properties of carbon nitride films prepared by radio frequency magnetron sputtering

Processing and Characterisation of PECVD Silicon Nitride Films

Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma

Optical & Electronic Properties of Carbon Nitride Thin Films

Properties of Silicon Quantum Dots Embedded in Silicon Nitride Deposited by Magnetron Co-Sputtering

Deposition and Characterization of Ammonia-free PECVD Silicon Nitride

Crystalline Carbon Nitride Films Grown By Microwave Plasma Chemical Vapor Deposition

Characteristics of Carbon Nitride Films Synthesized by Single-Source Ion Beam Enhanced Deposition System

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Thin films of silicon nitride deposited at room temperature by non-reactive magnetron sputtering: radiofrequency power and deposition time influence on the formation of α-Si3N4 and its optical properties

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Preparation and Analysis of Si3N4 Film